Patents by Inventor Stefan Muthmann

Stefan Muthmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ
    Patent number: 9478384
    Abstract: A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: October 25, 2016
    Assignee: Forschungszentrum Juelich GmbH
    Inventors: Stefan Muthmann, Aad Gordijn, Reinhard Carius, Markus Huelsbeck, Dzmitry Hrunski
  • ELECTRODE FOR PRODUCING A PLASMA, PLASMA CHAMBER HAVING SAID ELECTRODE, AND METHOD FOR ANALYZING OR PROCESSING A LAYER OR THE PLASMA IN SITU
    Publication number: 20130094022
    Abstract: A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is: disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.
    Type: Application
    Filed: July 7, 2011
    Publication date: April 18, 2013
    Inventors: Stefan Muthmann, Aad Gordijn, Reinhard Carius, Markus Huelsbeck, Dzmitry Hrunski