Abstract: A method for controlling a high-power drive device includes providing a current having a first predetermined current level to an output node during a first phase of a multi-phase turn-on process for the high-power drive device coupled to the output node. The method includes transitioning from the first phase to a second phase of the multi-phase turn-on process based on a first indication of a sensed voltage level on the output node during the first phase and a second indication of a time elapsed from a start of the first phase during the first phase. The method includes providing the current having a second predetermined current level to the output node during the second phase.

Abstract: An integrated circuit has an isolation capacitor structure that reduces the risk of breakdown from high electric fields at the edge of the top metal plate of the capacitor. The capacitor structure includes a bottom metal plate above a substrate. A first dielectric layer of a first dielectric material is formed between the bottom metal plate and the top metal plate. The capacitor structure also includes a thin narrow ring formed of a second dielectric material located under a portion of the top metal plate. The second dielectric material has a higher dielectric constant than the first dielectric material. The thin narrow ring follows the shape of the edge of the top metal plate with a portion of the ring underneath the top metal plate and a portion outside the edge of the top metal plate to thereby be located at a place of the maximum electric field.

Abstract: A method for controlling a high-power drive device includes providing a current having a first predetermined current level to an output node during a first phase of a multi-phase turn-on process for the high-power drive device coupled to the output node. The method includes transitioning from the first phase to a second phase of the multi-phase turn-on process based on a first indication of a sensed voltage level on the output node during the first phase and a second indication of a time elapsed from a start of the first phase during the first phase. The method includes providing the current having a second predetermined current level to the output node during the second phase.

Abstract: A method for driving a high-power drive device includes providing a signal having a first predetermined signal level to an output node during a first phase of a multi-phase transition process. The method includes generating a first indication of a first parameter associated with the signal provided to the output node. The method includes generating a second indication of a second parameter associated with the signal provided to the output node. The method includes providing the signal having a second predetermined signal level to the output node during a second phase of the multi-phase transition process. The method includes transitioning from the first phase to the second phase based on the first indication and the second indication. A multi-die, distributed package technique addresses power dissipation requirements for a driver product based on size and associated power dissipation needs of the high-power drive device in a target application.

Abstract: A method for driving a high-power drive device includes providing a signal having a first predetermined signal level to an output node during a first phase of a multi-phase transition process. The method includes generating a first indication of a first parameter associated with the signal provided to the output node. The method includes generating a second indication of a second parameter associated with the signal provided to the output node. The method includes providing the signal having a second predetermined signal level to the output node during a second phase of the multi-phase transition process. The method includes transitioning from the first phase to the second phase based on the first indication and the second indication. A multi-die, distributed package technique addresses power dissipation requirements for a driver product based on size and associated power dissipation needs of the high-power drive device in a target application.

Abstract: An integrated circuit has an isolation capacitor structure that reduces the risk of breakdown from high electric fields at the edge of the top metal plate of the capacitor. The capacitor structure includes a bottom metal plate above a substrate. A first dielectric layer of a first dielectric material is formed between the bottom metal plate and the top metal plate. The capacitor structure also includes a thin narrow ring formed of a second dielectric material located under a portion of the top metal plate. The second dielectric material has a higher dielectric constant than the first dielectric material. The thin narrow ring follows the shape of the edge of the top metal plate with a portion of the ring underneath the top metal plate and a portion outside the edge of the top metal plate to thereby be located at a place of the maximum electric field.

Abstract: An integrated circuit has an isolation capacitor structure that reduces the risk of breakdown from high electric fields at the edge of the top metal plate of the capacitor. The capacitor structure includes a bottom metal plate above a substrate. A first dielectric layer of a first dielectric material is formed between the bottom metal plate and the top metal plate. The capacitor structure also includes a thin narrow ring formed of a second dielectric material located under a portion of the top metal plate. The second dielectric material has a higher dielectric constant than the first dielectric material. The thin narrow ring follows the shape of the edge of the top metal plate with a portion of the ring underneath the top metal plate and a portion outside the edge of the top metal plate to thereby be located at a place of the maximum electric field.

Abstract: An integrated circuit has an isolation capacitor structure that reduces the risk of breakdown from high electric fields at the edge of the top metal plate of the capacitor. The capacitor structure includes a bottom metal plate above a substrate. A first dielectric layer of a first dielectric material is formed between the bottom metal plate and the top metal plate. The capacitor structure also includes a thin narrow ring formed of a second dielectric material located under a portion of the top metal plate. The second dielectric material has a higher dielectric constant than the first dielectric material. The thin narrow ring follows the shape of the edge of the top metal plate with a portion of the ring underneath the top metal plate and a portion outside the edge of the top metal plate to thereby be located at a place of the maximum electric field.

Abstract: A power transfer device includes a first power supply node, a second power supply node, and an oscillator circuit configured to convert an input DC signal across the first power supply node and the second power supply node into an AC signal on a differential pair of nodes comprising a first node and a second node in response to a control signal. The oscillator circuit includes a regulated power supply node and an active shunt regulator circuit configured to clamp a peak voltage level across the regulated power supply node and the second power supply node to a clamped voltage level. The clamped voltage level is linearly related to a first voltage level on the first power supply node.

Abstract: An integrated circuit includes a supply terminal to receive a supply voltage and a test terminal that operates in an input mode and an output mode. A test interface of the integrated circuit operates in a normal mode requiring a serial write to the test terminal to access test locations in the integrated circuit. The test interface also operates in an automatic mode in which addresses for test locations are auto incremented by toggling the supply voltage from a high voltage level to a low voltage level and back to the high voltage level. In an input mode, with the supply voltage at the low voltage level, the test pin receives configuration and address information. In output mode, with the supply voltage at the high voltage level, the test pin supplies test information corresponding to the address information received.

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

Abstract: A power transfer device includes a first power supply node, a second power supply node, and an oscillator circuit configured to convert an input DC signal across the first power supply node and the second power supply node into an AC signal on a differential pair of nodes comprising a first node and a second node in response to a control signal. The oscillator circuit includes a regulated power supply node and an active shunt regulator circuit configured to clamp a peak voltage level across the regulated power supply node and the second power supply node to a clamped voltage level. The clamped voltage level is linearly related to a first voltage level on the first power supply node.

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

Abstract: An integrated circuit includes an input terminal configured to receive an input signal, a reference voltage node configured to provide a control voltage, and a pass transistor comprising a first terminal coupled to a first node, a control terminal coupled to the reference voltage node, and a second terminal coupled to the input terminal. The control voltage has a control voltage level sufficient to allow a signal to pass from the second terminal to the first terminal. The pass transistor is configured to linearly transfer the input signal to the first node in response to a voltage level of the input signal being below a first voltage level and configured to transfer a voltage-limited version of the input signal to the first node in response to the voltage level being above the first voltage level. At most, a negligible DC current flows through the input terminal into the second terminal.

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

Abstract: An isolation system includes a transmit die and a receive die coupled by an isolation channel. The transmit die receives diagnostic data at an input terminal and transmits the diagnostic data over an isolation channel to a receive die. The receive die supplies a signal from an internal node in the receive die identified by the diagnostic data to an output terminal of the receive die. Other diagnostic data received by the transmit die causes the transmit die to supply a signal from an internal node in the transmit die to a terminal of the transmit die.

Abstract: An isolated power transfer device has a primary side and a secondary side isolated from the primary side by an isolation barrier. A secondary-side circuit includes a rectifier circuit coupled to a secondary-side conductive coil. The secondary-side circuit includes a first resistor coupled to a first power supply node and a terminal node. The secondary-side circuit includes a second resistor coupled to the terminal node and a second power supply node. The secondary-side circuit includes a first circuit to generate a feedback signal in response to a reference voltage and a signal on the terminal node. The feedback signal has a hysteretic band defined by the first resistor and the second resistor. The secondary-side circuit is configured as an AC/DC power converter that provides, on the first power supply node, an output DC signal having a voltage level based on a ratio of the first resistor to the second resistor.

Abstract: An integrated circuit includes a supply terminal to receive a supply voltage and a test terminal that operates in an input mode and an output mode. A test interface of the integrated circuit operates in a normal mode requiring a serial write to the test terminal to access test locations in the integrated circuit. The test interface also operates in an automatic mode in which addresses for test locations are auto incremented by toggling the supply voltage from a high voltage level to a low voltage level and back to the high voltage level. In an input mode, with the supply voltage at the low voltage level, the test pin receives configuration and address information. In output mode, with the supply voltage at the high voltage level, the test pin supplies test information corresponding to the address information received.

Abstract: An isolated power transfer device has a primary side and a secondary side isolated from the primary side by an isolation barrier. A secondary-side circuit includes a rectifier circuit coupled to a secondary-side conductive coil. The secondary-side circuit includes a first resistor coupled to a first power supply node and a terminal node. The secondary-side circuit includes a second resistor coupled to the terminal node and a second power supply node. The secondary-side circuit includes a first circuit to generate a feedback signal in response to a reference voltage and a signal on the terminal node. The feedback signal has a hysteretic band defined by the first resistor and the second resistor. The secondary-side circuit is configured as an AC/DC power converter that provides, on the first power supply node, an output DC signal having a voltage level based on a ratio of the first resistor to the second resistor.

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.