Abstract: A power semiconductor module has a base plate with a housing and a switching device. The switching device has a substrate and a connecting device with a first and a second main face. A group of power semiconductor components is arranged on a conductor track of the substrate, and has a group midpoint. A pressure device is formed on the substrate in the normal direction to exert pressure, which pressure device has a pressure body and a pressure inducing body, wherein a pressure element is arranged protruding from the pressure body, wherein the pressure element presses onto a pressure section of the second main face of the connecting device, and wherein the pressure inducing body has a pressure transmission section with a pressure transmission point.

Abstract: A power semiconductor module has a substrate arrangement which has a substrate, wherein the respective substrate has conductor tracks, power semiconductor components arranged on the substrate conductor tracks and electrically conductively contacted therewith, a foil stack arrangement which has at least one foil stack, and the foil stack comprises foil stack conductor tracks.

Abstract: A method for manufacturing a power semiconductor module and a power semiconductor module having, in each case, a housing, a switchgear arranged in this housing and having a plurality of connection elements, has the following method steps: A) forming a housing with pre-fixed connection elements; B) arranging the switchgear in the housing and connecting the connection elements to connection surfaces of a substrate of the switchgear; C) arranging a positioning device for fixing the position of the connection elements with respect to one another; D) fixing the connection elements relative to one another and to the housing.