Abstract: The invention relates to a method for the continuous coating of at least one substrate 14 with a semiconductor material e.g. CdTe. To this end a semiconductor material is sublimated in at least one crucible 30 in order to deposit it on a substrate, e.g. a glass panel. If the crucible 30 is filled with semiconductor material (16) during the deposition and/or evaporation, the set-up time required otherwise is then eliminated. Preferably used for carrying out the method is a CSS reactor comprising a crucible, a guide for substrates and at least one lock through which the crucible can be refilled during evaporation of semiconductor material from the crucible.

Abstract: The invention relates to a method for the continuous coating of at least one substrate 14 with a semiconductor material e.g. CdTe. To this end a semiconductor material is sublimated in at least one crucible 30 in order to deposit it on a substrate, e.g. a glass panel. If the crucible 30 is filled with semiconductor material (16) during the deposition and/or evaporation, the set-up time required otherwise is then eliminated. Preferably used for carrying out the method is a CSS reactor comprising a crucible, a guide for substrates and at least one lock through which the crucible can be refilled during evaporation of semiconductor material from the crucible.