Abstract: A vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (GaN) and at least two, preferably three, electrodes arranged vertically one above the other. The semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. An intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.

Abstract: A method for manufacturing a portable data carrier by means of a continuous manufacturing method, comprises the steps: providing at least one foil as a rolled good, unrolling at least one first foil, with at least a first foil being coated at least partly with an adhesive on at least one side, with at least the first foil being scored on at least one side along at least one creasing edge, with at least the first foil being folded up in precise fit along at least one creasing edge and bonded, with the foil being folded up in the direction of the side which is coated with adhesive, with the side coated with adhesive being arranged on the opposite side of the foil which has at least one scored creasing edge along which it is folded.

Abstract: A method for manufacturing a portable data carrier by means of a continuous manufacturing method, comprises the steps: providing at least one foil as a rolled good, unrolling at least one first foil, with at least a first foil being coated at least partly with an adhesive on at least one side, with at least the first foil being scored on at least one side along at least one creasing edge, with at least the first foil being folded up in precise fit along at least one creasing edge and bonded, with the foil being folded up in the direction of the side which is coated with adhesive, with the side coated with adhesive being arranged on the opposite side of the foil which has at least one scored creasing edge along which it is folded.

Abstract: A method for manufacturing a portable data carrier by means of a continuous manufacturing method, comprises the steps: providing at least one foil as a rolled good, unrolling at least one first foil, with at least a first foil being coated at least partly with an adhesive on at least one side, with at least the first foil being scored on at least one side along at least one creasing edge, with at least the first foil being folded up in precise fit along at least one creasing edge and bonded, with the foil being folded up in the direction of the side which is coated with adhesive, with the side coated with adhesive being arranged on the opposite side of the foil which has at least one scored creasing edge along which it is folded.

Abstract: A metal complex is disclosed. In an embodiment a metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: wherein E1 and E2 are oxygen, wherein the substituent R1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R2 is selected from the group consisting of branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, wherein m>0 to at most 5?n, and wherein the metal M is a main group metal of groups 13 to 15 of the periodic table of elements.

Abstract: A metal complex is disclosed. In an embodiment a metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: wherein E1 and E2 are oxygen, wherein the substituent R1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R2 is selected from the group consisting of branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, wherein m>0 to at most 5?n, and wherein the metal M is a main group metal of groups 13 to 15 of the periodic table of elements.

Abstract: A method for producing an organic electronic component and an organic electronic component are disclosed. In an embodiment the component comprises at least one organic electronic layer having a matrix, wherein the matrix contains a metal complex as a dopant, wherein the metal complex comprises at least one metal atom M and at least one ligand L bonded to the metal atom M.

Abstract: The invention relates to an organic electronic component (100) comprising at least one charge generation layer (5) which has an organically p-doped region (5a) that contains a zinc complex as a p-dopant, said zinc complex in turn containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently from one another, wherein R4 is selected from the group containing alkyl or aryl and which can be bonded to R3; and wherein R3 is selected from the group containing alkyl, long-chain alkyl, cycloalkyl, halogen alkyl, at least partially halogenated long-chain alkyl, halogen cycloalkyl, aryl, arylene, halogen aryl, heteroaryl, heteroarylene, heterocyclic alkylene, heterocycloalkyl, halogen heteroaryl, alkenyl, halogen alkenyl, alkynyl, halogen alkynyl, ketoaryl, halogen ketoaryl, ketoheteroaryl, ketoalkyl, halogen ketoalkyl, ketoalkenyl, halogen ketoalkenyl, halogen alkyl aryl, and halogen alkyl heteroaryl, wherein, for suitable groups, on

Abstract: An organic electronic component and a method for making an organic electronic component with a p-dopant are disclosed. In an embodiment, the component includes a matrix containing a zinc complex as a p-dopant, the zinc complex containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently selected from one another, wherein R3 may comprise alkyl, long-chain alkyl, cycloalkyl, halogen-alkyl, aryl, arylene, halogen-aryl, heteroaryl, heteroarylene, heterocyclic-alkylene, heterocycloalkyl, halogen-heteroaryl, alkenyl, halogen-alkenyl, alkynyl, halogen-alkynyl, ketoaryl, halogen-ketoaryl, ketoheteroaryl, ketoalkyl, halogen-ketoalkyl, ketoalkenyl, halogen-ketoalkenyl, halogen-alkyl-aryl or halogen-alkyl-heteroaryl, and wherein R4 is selected from the group consisting of alkyl and aryl which can be bonded to R3.

Abstract: The present invention relates to n-dopants for doping organic electron transport materials, wherein the n-dopants have at least one aminophosphazene group of formula 1 having 4 nitrogen atoms bonded to a phosphorus atom.

Abstract: The invention relates to an organic electronic component (100) comprising at least one charge generation layer (5) which has an organically p-doped region (5a) that contains a zinc complex as a p-dopant, said zinc complex in turn containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently from one another, wherein R4 is selected from the group containing alkyl or aryl and which can be bonded to R3; and wherein R3 is selected from the group containing alkyl, long-chain alkyl, cycloalkyl, halogen alkyl, at least partially halogenated long-chain alkyl, halogen cycloalkyl, aryl, arylene, halogen aryl, heteroaryl, heteroarylene, heterocyclic alkylene, heterocycloalkyl, halogen heteroaryl, alkenyl, halogen alkenyl, alkynyl, halogen alkynyl, ketoaryl, halogen ketoaryl, ketoheteroaryl, ketoalkyl, halogen ketoalkyl, ketoalkenyl, halogen ketoalkenyl, halogen alkyl aryl, and halogen alkyl heteroaryl, wherein, for suitable groups, on

Abstract: The present invention relates to n-dopants for doping organic electron transport materials, wherein the n-dopants have at least one aminophosphazene group of formula 1 having 4 nitrogen atoms bonded to a phosphorus atom.

Abstract: A metal complex is disclosed. In an embodiment the metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: wherein E1 and E2 are oxygen, wherein the substituent R1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R2 is selected from the group consisting of —CN, branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, and wherein m=0 to at most 5?n.

Abstract: A method for producing an organic electronic component and an organic electronic component are disclosed. In an embodiment the component comprises at least one organic electronic layer having a matrix, wherein the matrix contains a metal complex as a dopant, wherein the metal complex comprises at least one metal atom M and at least one ligand L bonded to the metal atom M.

Abstract: An organic electronic component and a method for making an organic electronic component with a p-dopant are disclosed. In an embodiment, the component includes a matrix containing a zinc complex as a p-dopant, the zinc complex containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently selected from one another, wherein R3 may comprise alkyl, long-chain alkyl, cycloalkyl, halogen-alkyl, aryl, arylene, halogen-aryl, heteroaryl, heteroarylene, heterocyclic-alkylene, heterocycloalkyl, halogen-heteroaryl, alkenyl, halogen-alkenyl, alkynyl, halogen-alkynyl, ketoaryl, halogen-ketoaryl, ketoheteroaryl, ketoalkyl, halogen-ketoalkyl, ketoalkenyl, halogen-ketoalkenyl, halogen-alkyl-aryl or halogen-alkyl-heteroaryl, and wherein R4 is selected from the group consisting of alkyl and aryl which can be bonded to R3.