Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

Abstract: An improved concentrated solar power collector, includes a frame intended to be mounted rotatable to a stand surface, according to a first axis perpendicular to the stand surface, at least one solar concentrator fixed on the frame at a desired angle determined so that the solar concentrator is oriented at between 20 and 70° with reference to the stand surface and reflect or direct sunlight upwardly toward a heat pipe, connected to a steam network including a steam tank carried by the frame, wherein the frame is able to rotate automatically to provide an azimuth-tracking of the solar concentrator following the azimuth of the sun, wherein the steam tank works with a diffusion absorption cooling machine or a hot water heating arrangement, feeding a warm-water tank and an ice/cold-water tank, the warm-water and ice/cold-water tanks being directly connected to a house.

Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.