Abstract: This pile installation system for an offshore foundation construction includes a main body, a movable part and a first means for attaching the main body to a frame of reference. This frame of reference is configured to act as a counterweight. It further includes a second means for attaching the movable part to a pile to be installed, and the movable part may be moved, with respect to the main body, in translation about the direction of an insertion axis.

Abstract: This pile installation system for an offshore foundation construction includes a main body, a movable part and a first means for attaching the main body to a frame of reference. This frame of reference is configured to act as a counterweight. It further includes a second means for attaching the movable part to a pile to be installed, and the movable part may be moved, with respect to the main body, in translation about the direction of an insertion axis.

Abstract: The invention relates to a method for stabilizing a photovoltaic silicon solar cell, including a regeneration step in which a semiconductor substrate of the solar cell which are heated to at least 50° C. is injected with charge carriers. The invention is characterized in that a degradation step is carried out before the regeneration step, wherein the solar cell is subjected to radiation, in particular laser radiation, having an illumination intensity of at least 5.000 W/m2 and the solar cell is simultaneously cooled. The invention also relates to a device for stabilizing a photovoltaic silicon solar cell.

Abstract: The invention relates to a method for stabilizing a photovoltaic silicon solar cell, including a regeneration step in which a semiconductor substrate of the solar cell which are heated to at least 50° C. is injected with charge carriers. The invention is characterized in that a degradation step is carried out before the regeneration step, wherein the solar cell is subjected to radiation, in particular laser radiation, having an illumination intensity of at least 5.000 W/m2 and the solar cell is simultaneously cooled. The invention also relates to a device for stabilizing a photovoltaic silicon solar cell.

Abstract: A method is provided for measuring a semiconductor structure, which allows the spatially resolved determination of dark saturation current and/or series resistance and/or resistance of the emitter layer of the semiconductor structure via luminescence measurement, without restrictions being given such that one of the parameters must be known in advance or spatially consistent.

Abstract: A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter CV,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances RS,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances RS,i are each determined as a function of a global series resistance RSg of the semiconductor structure that is identical for all local series resistances.

Abstract: The invention relates to a method for measuring a semiconductor structure, which has an emitter and a base, and which is a solar cell or a precursor of a solar cell, comprising the following steps: A) Generating luminescence radiation in the semiconductor structure, and spatially resolved measuring of the luminescence radiation emitted by the semiconductor structure, wherein a first measurement is conducted under a first measurement condition a, and depending on the measurement data that are obtained at least from the first measurement, a first spatially resolved, voltage-calibrated image Va(xi) for a plurality of local points xi of the solar cell is determined from the measurement data obtained in step A; B) Determining spatially resolved properties of the semiconductor structure with respect to the spatially resolved dark saturation current j0(xi), and/or the spatially resolved emitter layer resistance ?(x1), and/or the spatially resolved, local series resistance Rs(xi) for the plurality of local points xi,

Abstract: A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter CV,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances RS,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances RS,i are each determined as a function of a global series resistance RSg of the semiconductor structure that is identical for all local series resistances.

Abstract: A measuring device for electrically measuring a measurement structure that can be electrically contacted at one measuring side, in particular an optoelectronic element, such as a solar cell, including at least two contacting units for electrically contacting the measurement structure and at least one support element for supporting the measurement structure with the measuring side on the support element. It is essential that the measuring device includes at least one suction line for the connection to the suction unit and at least one suction opening that is connected in a fluid-conducting manner to the suction line, wherein the suction opening is arranged in and/or on the support element such that the measurement structure can be pressed against the support element by suctioning via the suction opening. When the measurement structure rests on the support element, the contacting unit can be pressed against the measuring side of the measurement structure for the electrical contacting thereof.