Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: A technique of operating a device comprising a patterned conductor layer defining source electrode circuitry and drain electrode circuitry for a plurality of transistors; a semiconductor layer providing a respective semiconductor channel for each transistor between source electrode circuitry and drain electrode circuitry; and gate electrode circuitry overlapping the semiconductor channels of the plurality of transistor devices for switching the semiconductor channels between two or more levels of conductance; wherein the technique comprises using one or more further conductors independent of said gate electrode circuitry to capacitatively induce a reduction in conductivity of said one or more areas of said semiconductor layer outside of said semiconductor channels.

Abstract: A movement distance sensor operates as a differential transformer with a primary coil, at least two secondary coils. A circuit configuration is connected to the secondary coils in order to determine a movement distance. The circuit configuration includes a multiplexer, an A/D converter, and a digital logic module. The multiplexer is connected to the first and the second secondary coil via an input stage. The output of the multiplexer is connected to the input of the A/D converter and the output of the A/D converter is passed to the input of the digital logic module. The latter determines the movement distance from the input signals received alternately from the multiplexer. The measurement configuration exhibits high reliability with low error tolerances.

Abstract: A movement distance sensor operates as a differential transformer with a primary coil, at least two secondary coils. A circuit configuration is connected to the secondary coils in order to determine a movement distance. The circuit configuration includes a multiplexer, an A/D converter, and a digital logic module. The multiplexer is connected to the first and the second secondary coil via an input stage. The output of the multiplexer is connected to the input of the A/D converter and the output of the A/D converter is passed to the input of the digital logic module. The latter determines the movement distance from the input signals received alternately from the multiplexer. The measurement configuration exhibits high reliability with low error tolerances.