Abstract: A device for performing surface treatment on semiconductor wafers has a cassette (1) for accommodating a plurality of wafers (5) in its interior (3); the wafers (5) are aligned in a first row. The wafer surfaces (51) are essentially in parallel with each other. The cassette (1) has a side-wall (10) which can be arranged essentially perpendicular with respect to the wafer surfaces (51); the side-wall (10) has openings (111′-145′) on its face (101) which is directed to the wafers (5), the openings (111′-145′) are aligned in second rows, the second rows are essentially parallel to the first row; the openings (111′-114′) are connected to respective supply channels (11′, 12′, 13′, 14′, 15′) for transporting a surface treatment medium which is fed to one (15′) of these supply channels via a feeding point (FP). The cross-section of the openings (111′-145′) is variable.

Abstract: A device for performing surface treatment on semiconductor wafers has a cassette (1) for accommodating a plurality of wafers (5) in its interior (3); the wafers (5) are aligned in a first row. The wafer surfaces (51) are essentially in parallel with each other. The cassette (1) has a side-wall (10) which can be arranged essentially perpendicular with respect to the wafer surfaces (51) ; the side-wall (10) has openings (111′-145′) on its face (101) which is directed to the wafers (5), the openings (111′-145′) are aligned in second rows, the second rows are essentially parallel to the first row; the openings (111′-114′) are connected to respective supply channels (11′, 12′, 13′, 14′, 15′) for transporting a surface treatment medium which is fed to one (15′) of these supply channels via a feeding point (FP). The cross-section of the openings (111′-145′) is variable.