Patents by Inventor Stefan Sedlmaier
Stefan Sedlmaier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9941365Abstract: A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining an active area, forming a vertical trench from the first surface into the semiconductor body, forming a field dielectric layer at least on a side wall and a bottom wall of the vertical trench, depositing a conductive layer on the field dielectric layer, forming a closed cavity on the conductive layer in the vertical trench, and forming an insulated gate electrode on the closed cavity in the vertical trench.Type: GrantFiled: June 22, 2016Date of Patent: April 10, 2018Assignee: Infineon Technologies Austria AGInventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
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Publication number: 20160300914Abstract: A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining an active area, forming a vertical trench from the first surface into the semiconductor body, forming a field dielectric layer at least on a side wall and a bottom wall of the vertical trench, depositing a conductive layer on the field dielectric layer, forming a closed cavity on the conductive layer in the vertical trench, and forming an insulated gate electrode on the closed cavity in the vertical trench.Type: ApplicationFiled: June 22, 2016Publication date: October 13, 2016Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
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Patent number: 9406763Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress.Type: GrantFiled: November 3, 2014Date of Patent: August 2, 2016Assignee: Infineon Technologies Austria AGInventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
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Patent number: 9190511Abstract: A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.Type: GrantFiled: June 11, 2013Date of Patent: November 17, 2015Assignee: Infineon Technologies Austria AGInventors: Frank Pfirsch, Anton Mauder, Armin Willmeroth, Hans-Joachim Schulze, Stefan Sedlmaier, Markus Zundel, Franz Hirler, Arunjai Mittal
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Publication number: 20150137222Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress.Type: ApplicationFiled: November 3, 2014Publication date: May 21, 2015Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
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Patent number: 8907408Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.Type: GrantFiled: March 26, 2012Date of Patent: December 9, 2014Assignee: Infineon Technologies Austria AGInventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
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Patent number: 8643086Abstract: A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.Type: GrantFiled: February 7, 2012Date of Patent: February 4, 2014Assignee: Infineon Technologies Austria AGInventors: Frank Dieter Pfirsch, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
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Publication number: 20140001528Abstract: A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.Type: ApplicationFiled: June 11, 2013Publication date: January 2, 2014Inventors: Frank Pfirsch, Anton Mauder, Armin Willmeroth, Hans-Joachim Schulze, Stefan Sedlmaier, Markus Zundel, Franz Hirler, Arunjai Mittal
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Publication number: 20130248993Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.Type: ApplicationFiled: March 26, 2012Publication date: September 26, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
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Patent number: 8461648Abstract: A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.Type: GrantFiled: July 27, 2006Date of Patent: June 11, 2013Assignee: Infineon Technologies Austria AGInventors: Frank Pfirsch, Anton Mauder, Armin Willmeroth, Hans-Joachim Schulze, Stefan Sedlmaier, Markus Zundel, Franz Hirler, Arunjai Mittal
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Patent number: 8319261Abstract: A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.Type: GrantFiled: January 5, 2011Date of Patent: November 27, 2012Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Stefan Sedlmaier, Ralf Erichsen, Hans Weber, Oliver Haeberlen, Franz Hirler
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Patent number: 8263450Abstract: A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.Type: GrantFiled: January 8, 2009Date of Patent: September 11, 2012Assignee: Infineon Technologies AGInventors: Stefan Sedlmaier, Hans-Joachim Schulze, Anton Mauder, Helmut Strack, Armin Willmeroth, Frank Pfirsch
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Patent number: 8193584Abstract: A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.Type: GrantFiled: June 30, 2008Date of Patent: June 5, 2012Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Stefan Sedlmaier, Armin Willmeroth
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Publication number: 20120132956Abstract: A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.Type: ApplicationFiled: February 7, 2012Publication date: May 31, 2012Applicant: Infineon Technologies AGInventors: Frank Dieter Pfirsch, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
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Patent number: 8110868Abstract: A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.Type: GrantFiled: May 17, 2006Date of Patent: February 7, 2012Assignee: Infineon Technologies Austria AGInventors: Frank Dieter Pfirsch, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
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Patent number: 7968919Abstract: A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.Type: GrantFiled: December 20, 2007Date of Patent: June 28, 2011Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
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Patent number: 7947569Abstract: A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.Type: GrantFiled: June 30, 2008Date of Patent: May 24, 2011Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Frank Pfirsch, Rudolf Berger, Stefan Sedlmaier, Wolfgang Lehnert, Raimund Foerg
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Patent number: 7943449Abstract: A method for producing a semiconductor structure and a semiconductor component are described.Type: GrantFiled: September 30, 2008Date of Patent: May 17, 2011Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Stefan Sedlmaier, Ralf Erichsen, Hans Weber, Oliver Haeberlen, Franz Hirler
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Patent number: 7943987Abstract: A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.Type: GrantFiled: October 18, 2007Date of Patent: May 17, 2011Assignee: Infineon Technologies Austria AGInventors: Armin Willmeroth, Anton Mauder, Franz Hirler, Stefan Sedlmaier, Frank Pfirsch
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Publication number: 20110101451Abstract: A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.Type: ApplicationFiled: January 5, 2011Publication date: May 5, 2011Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Anton Mauder, Stefan Sedlmaier, Ralf Erichsen, Hans Weber, Oliver Haeberlen, Franz Hirler