Patents by Inventor Stefan Sedlmaier

Stefan Sedlmaier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9941365
    Abstract: A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining an active area, forming a vertical trench from the first surface into the semiconductor body, forming a field dielectric layer at least on a side wall and a bottom wall of the vertical trench, depositing a conductive layer on the field dielectric layer, forming a closed cavity on the conductive layer in the vertical trench, and forming an insulated gate electrode on the closed cavity in the vertical trench.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: April 10, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
  • Publication number: 20160300914
    Abstract: A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining an active area, forming a vertical trench from the first surface into the semiconductor body, forming a field dielectric layer at least on a side wall and a bottom wall of the vertical trench, depositing a conductive layer on the field dielectric layer, forming a closed cavity on the conductive layer in the vertical trench, and forming an insulated gate electrode on the closed cavity in the vertical trench.
    Type: Application
    Filed: June 22, 2016
    Publication date: October 13, 2016
    Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
  • Patent number: 9406763
    Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: August 2, 2016
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
  • Patent number: 9190511
    Abstract: A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: November 17, 2015
    Assignee: Infineon Technologies Austria AG
    Inventors: Frank Pfirsch, Anton Mauder, Armin Willmeroth, Hans-Joachim Schulze, Stefan Sedlmaier, Markus Zundel, Franz Hirler, Arunjai Mittal
  • Publication number: 20150137222
    Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 21, 2015
    Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
  • Patent number: 8907408
    Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: December 9, 2014
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
  • Patent number: 8643086
    Abstract: A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: February 4, 2014
    Assignee: Infineon Technologies Austria AG
    Inventors: Frank Dieter Pfirsch, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
  • Publication number: 20140001528
    Abstract: A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
    Type: Application
    Filed: June 11, 2013
    Publication date: January 2, 2014
    Inventors: Frank Pfirsch, Anton Mauder, Armin Willmeroth, Hans-Joachim Schulze, Stefan Sedlmaier, Markus Zundel, Franz Hirler, Arunjai Mittal
  • Publication number: 20130248993
    Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.
    Type: Application
    Filed: March 26, 2012
    Publication date: September 26, 2013
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder, Ralf Siemieniec, Oliver Blank, Michael Hutzler
  • Patent number: 8461648
    Abstract: A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
    Type: Grant
    Filed: July 27, 2006
    Date of Patent: June 11, 2013
    Assignee: Infineon Technologies Austria AG
    Inventors: Frank Pfirsch, Anton Mauder, Armin Willmeroth, Hans-Joachim Schulze, Stefan Sedlmaier, Markus Zundel, Franz Hirler, Arunjai Mittal
  • Patent number: 8319261
    Abstract: A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.
    Type: Grant
    Filed: January 5, 2011
    Date of Patent: November 27, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Stefan Sedlmaier, Ralf Erichsen, Hans Weber, Oliver Haeberlen, Franz Hirler
  • Patent number: 8263450
    Abstract: A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: September 11, 2012
    Assignee: Infineon Technologies AG
    Inventors: Stefan Sedlmaier, Hans-Joachim Schulze, Anton Mauder, Helmut Strack, Armin Willmeroth, Frank Pfirsch
  • Patent number: 8193584
    Abstract: A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: June 5, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Stefan Sedlmaier, Armin Willmeroth
  • Publication number: 20120132956
    Abstract: A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.
    Type: Application
    Filed: February 7, 2012
    Publication date: May 31, 2012
    Applicant: Infineon Technologies AG
    Inventors: Frank Dieter Pfirsch, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
  • Patent number: 8110868
    Abstract: A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.
    Type: Grant
    Filed: May 17, 2006
    Date of Patent: February 7, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Frank Dieter Pfirsch, Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
  • Patent number: 7968919
    Abstract: A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: June 28, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
  • Patent number: 7947569
    Abstract: A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: May 24, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Frank Pfirsch, Rudolf Berger, Stefan Sedlmaier, Wolfgang Lehnert, Raimund Foerg
  • Patent number: 7943987
    Abstract: A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.
    Type: Grant
    Filed: October 18, 2007
    Date of Patent: May 17, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Anton Mauder, Franz Hirler, Stefan Sedlmaier, Frank Pfirsch
  • Patent number: 7943449
    Abstract: A method for producing a semiconductor structure and a semiconductor component are described.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: May 17, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Stefan Sedlmaier, Ralf Erichsen, Hans Weber, Oliver Haeberlen, Franz Hirler
  • Publication number: 20110101451
    Abstract: A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.
    Type: Application
    Filed: January 5, 2011
    Publication date: May 5, 2011
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Anton Mauder, Stefan Sedlmaier, Ralf Erichsen, Hans Weber, Oliver Haeberlen, Franz Hirler