Abstract: A Schottky diode and a method for making one. The method includes the following steps: providing a semiconductor base body, preferably in the form of a wafer, having a high dopant concentration and having a first main surface, which forms the first electrical contact surface of the Schottky diode; epitaxially depositing a semiconductor layer having the same conductivity and a lower dopant concentration on that surface of the semiconductor base body which lies opposite the first main surface; arranging a first metal layer on the semiconductor layer with the formation of a Schottky contact between the first metal layer and the semiconductor layer; connecting a planar contact body to the first metal layer by means of a connecting means; forming at least one individual Schottky diode; and arranging a passivation layer in the edge region of the at least one Schottky diode.

Abstract: A connecting device which can be arranged relative to a photovoltaic module for the purpose of electrically connecting a plurality of photovoltaic modules to one another and/or to an inverter device comprising at least a housing. The housing includes a first housing element and a second housing element; first connection devices for electrical connection to the photovoltaic module arranged in the first housing element; and second connection devices for electrical connection to a further connecting device or to the inverter device of a semiconductor circuit having at least one semiconductor component arranged in the second housing element. The connecting device further includes first contact devices, which are associated with the first housing element, and second contact devices, which are associated with the second housing element. The semiconductor circuit arrangement can be electrically connected to the first connection devices.

Abstract: An arrangement comprising: at least one power semiconductor module and a transport packaging. The power semiconductor module has a base element, a housing and connection elements. The transport packaging has a cover layer, an interlayer with a respective cutout assigned to the power semiconductor module, and a cover film. The cover layer is generally planar, and has a first main surface facing the power semiconductor module. The interlayer is arranged on the first main surface of the cover layer. The power semiconductor module is arranged in the cutout, on the first main surface of the cover layer, wherein the base element of the power semiconductor module is disposed on the first main surface of the cover layer. The cover film bears on and covers substantial parts of the housing of the power semiconductor module. The cover film is connected to the first main surface of the interlayer.

Abstract: A Schottky diode and a method for making one. The method includes the following steps: providing a semiconductor base body, preferably in the form of a wafer, having a high dopant concentration and having a first main surface, which forms the first electrical contact surface of the Schottky diode; epitaxially depositing a semiconductor layer having the same conductivity and a lower dopant concentration on that surface of the semiconductor base body which lies opposite the first main surface; arranging a first metal layer on the semiconductor layer with the formation of a Schottky contact between the first metal layer and the semiconductor layer; connecting a planar contact body to the first metal layer by means of a connecting means; forming at least one individual Schottky diode; and arranging a passivation layer in the edge region of the at least one Schottky diode.

Abstract: An arrangement comprising at least one power semiconductor module and a transport packaging, wherein the power semiconductor module has a base element, a housing and connection elements and the transport packaging has a generally planar cover layer, a cover film and at least one trough-like plastic shaped body for each power semiconductor module. The at least one plastic shaped body only partly encloses the respective power semiconductor module and a part of the plastic shaped body does not directly contact the power semiconductor module. Furthermore, a first side of the at least one power semiconductor module becomes situated directly or indirectly on the first main surface of the cover layer, while the cover film covers the further sides of the power semiconductor module directly and/or indirectly, and bears at least partly against the plastic shaped body.

Abstract: A connecting device which can be arranged relative to a photovoltaic module for the purpose of electrically connecting a plurality of photovoltaic modules to one another and/or to an inverter device comprising at least a housing. The housing includes a first housing element and a second housing element; first connection devices for electrical connection to the photovoltaic module arranged in the first housing element; and second connection devices for electrical connection to a further connecting device or to the inverter device of a semiconductor circuit having at least one semiconductor component arranged in the second housing element. The connecting device further includes first contact devices, which are associated with the first housing element, and second contact devices, which are associated with the second housing element. The semiconductor circuit arrangement can be electrically connected to the first connection devices.

Abstract: An arrangement comprising: at least one power semiconductor module and a transport packaging. The power semiconductor module has a base element, a housing and connection elements. The transport packaging has a cover layer, an interlayer with a respective cutout assigned to the power semiconductor module, and a cover film. The cover layer is generally planar, and has a first main surface facing the power semiconductor module. The interlayer is arranged on the first main surface of the cover layer. The power semiconductor module is arranged in the cutout, on the first main surface of the cover layer, wherein the base element of the power semiconductor module is disposed on the first main surface of the cover layer. The cover film bears on and covers substantial parts of the housing of the power semiconductor module. The cover film is connected to the first main surface of the interlayer.

Abstract: An arrangement comprising at least one power semiconductor module and a transport packaging, wherein the power semiconductor module has a base element, a housing and connection elements and the transport packaging has a generally planar cover layer, a cover film and at least one trough-like plastic shaped body for each power semiconductor module. The at least one plastic shaped body only partly encloses the respective power semiconductor module and a part of the plastic shaped body does not directly contact the power semiconductor module. Furthermore, a first side of the at least one power semiconductor module becomes situated directly or indirectly on the first main surface of the cover layer, while the cover film covers the further sides of the power semiconductor module directly and/or indirectly, and bears at least partly against the plastic shaped body.