Abstract: A semiconductor device includes a transistor having macro cells. A plurality of the macro cells include a first macro cell and a second macro cell. Each first and second macro cell includes trenches formed in a first main surface of a semiconductor substrate. The trenches pattern the semiconductor substrate into mesas and include a conductive trench, with a conductive material in the conductive trench being electrically connected to a terminal. A majority of all trenches of the first macro cell exclusively run in a first direction. A majority of all trenches of the second macro cell exclusively run in a second direction different from the first direction. At least one first macro cell is arranged adjacent to at least one second macro cell.

Abstract: A method for calibrating a second bonding machine based on a calibrated first bonding machine is disclosed. The first bonding machine includes a first ultrasonic transducer. The second bonding machine includes a second ultrasonic transducer and a power supply. The method includes providing a first electrical calibration supply that causes the first ultrasonic transducer to oscillate at a first calibration amplitude when it is damped by a mechanical damping, providing a second electrical calibration supply that causes the second ultrasonic transducer to oscillate at the same calibration amplitude when it is damped by the same mechanical damping.

Abstract: A method for calibrating a second bonding machine based on a calibrated first bonding machine is disclosed. The first bonding machine includes a first ultrasonic transducer. The second bonding machine includes a second ultrasonic transducer and a power supply. The method includes providing a first electrical calibration supply that causes the first ultrasonic transducer to oscillate at a first calibration amplitude when it is damped by a mechanical damping, providing a second electrical calibration supply that causes the second ultrasonic transducer to oscillate at the same calibration amplitude when it is damped by the same mechanical damping.

Abstract: A method comprises heating a first electrically conductive layer that is to be electrically contacted, and that is arranged on a first element, and pressing a first end of a bonding wire on the first electrically conductive layer by exerting pressure to the first end of the bonding wire, and further by exposing the first end of the bonding wire to ultrasonic energy, thereby deforming the first end of the bonding wire and creating a permanent substance-to-substance bond between the first end of the bonding wire and the first electrically conductive layer. The bonding wire either comprises a rounded cross section with a diameter of at least 125 ?m or a rectangular cross section with a first width of at least 500 ?m and a first height of at least 50 ?m.