Abstract: Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Abstract: In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution.

Abstract: Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: The present invention provides methods and apparatus for vaporizing and transporting precursor molecules to a process chamber for deposition of thin films on a substrate. The methods and apparatus include CVD solvents that comprise ionic liquids. The ionic liquids comprise salt compounds that have substantially no measurable vapor pressure (i.e., less than about 1 Torr at about room temperature), exhibit a wide liquid temperature range (i.e., greater than about 100° C.), and have low melting points (i.e., less than about 250° C.). A desired precursor is dissolved in a selected CVD solvent comprising an ionic liquid. The solvent and precursor solution is heated to or near the precursor volatilization temperature of the precursor. A stream of carrier gas is directed over or is bubbled through the solvent and precursor solution to distill and transport precursor molecules in the vapor phase to a deposition chamber.

Abstract: The present invention provides methods and apparatus for vaporizing and transporting precursor molecules to a process chamber for deposition of thin films on a substrate. The methods and apparatus include CVD solvents that comprise ionic liquids. The ionic liquids comprise salt compounds that have substantially no measurable vapor pressure (i.e., less than about 1 Torr at about room temperature), exhibit a wide liquid temperature range (i.e., greater than about 100° C.), and have low melting points (i.e., less than about 250° C.). A desired precursor is dissolved in a selected CVD solvent comprising an ionic liquid. The solvent and precursor solution is heated to or near the precursor volatilization temperature of the precursor. A stream of carrier gas is directed over or is bubbled through the solvent and precursor solution to distill and transport precursor molecules in the vapor phase to a deposition chamber.

Abstract: In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution.

Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.

Abstract: Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.

Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I):L.sub.y M(CO).sub.zwherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I):L.sub.y M(CO).sub.zwherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

Abstract: A method of electroless plating at least one homogeneous metal coating in a predetermined pattern on a solid substrate surface having pendant hydroxy groups. The method includes the steps of providing a first monatomic metal layer in a predetermined pattern on the solid substrate surface having pendent hydroxy groups and then immersing the solid substrate surface in a bath containing a chemical reducing agent to build up the at least one homogeneous metal coating only on the monatomic metal layer.