Patents by Inventor Stefan WEINBERGER

Stefan WEINBERGER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200258862
    Abstract: Anodic bonding method are disclosed. In one embodiment, an anodic bonding method may include: (1) providing a first substrate (100) having a semiconductor material; (2) providing a second substrate (200) having a bondable passivation material and contact vias (210); (3) contacting the first substrate and the second substrate (100, 200); (4) providing a resistance layer (300, 220) on the second substrate (200); and (5) applying a potential between the resistance layer and the first substrate.
    Type: Application
    Filed: April 29, 2020
    Publication date: August 13, 2020
    Inventors: Stefan WEINBERGER, Roy KNECHTEL, Peter TILO
  • Publication number: 20200258863
    Abstract: A semiconductor device comprising a first substrate (100) including silicon may include a bondable passivation (200) made of a bondable material, especially a glass material; at least one contact via (210) extending through the passivation and contacting a region of the first substrate (100); an interface (204) created by anodic bonding between the substrate including silicon and the bondable passivation (200), wherein silicon-oxygen-silicon bonds are formed in the interface in order to provide adhesion between the passivation (200) and the substrate (100)
    Type: Application
    Filed: April 29, 2020
    Publication date: August 13, 2020
    Inventors: Stefan WEINBERGER, Roy KNECHTEL, Peter TILO
  • Publication number: 20200118967
    Abstract: Concepts as well as arrangements are suggested, according to which a bond is enabled by anodic bonding between a glass substrate (200) having contact vias (210) and a substrate (100) including a semiconductor. For this purpose, a cover of the contact vias (210) is provided during the anodic bonding method such that process conditions are created that achieve a reliable and robust bonding of the substrates. A high resistance can be provided in the region of the contact vias (210). The arrangement for contacting the semiconductor device to the silicon substrate (100) having at least one contact via (210) extending through the passivation in order to contact a region of the first substrate (100).
    Type: Application
    Filed: October 15, 2019
    Publication date: April 16, 2020
    Inventors: Stefan WEINBERGER, Roy KNECHTEL, Peter TILO