Abstract: It is provided an adjustment device for a vehicle seat, comprising an output element to which a drive torque can be transferred, and a brake assembly for locking the output element and absorbing, via at least two brake elements adjustably mounted in a brake housing of the brake assembly, forces applied to the output element on the output side, wherein locking, provided via the brake assembly, of the output element can be released in order to rotate the output element in a direction of rotation when a drive torque is applied on the drive side, and, in order to lock the output element, the brake elements are in a locking position in which, when forces are applied on the output side via the output element and are acting in a direction of rotation, at least one of the brake elements bears frictionally against a brake surface of the brake housing.

Abstract: The invention relates to an epitaxially coated semiconductor wafer, processed by a method in which the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing. The resulting wafer has exceptional geometry, as reflected by low ESFQR values.

Abstract: The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. The invention further relates to a control system for controlling a coating apparatus for processing a semiconductor water, to a plant for processing a semiconductor wafer having a coating apparatus which comprises the control system, and a semiconductor wafer. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing.

Abstract: Semiconductor wafers are produced from a workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires tensioned between wire guide rollers and divided into wire groups, the wires moving in a running direction producing kerfs as wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups determined, and for each of the wire groups compensating movements of the wires of the wire group are induced as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.

Abstract: The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. The invention further relates to a control system for controlling a coating apparatus for processing a semiconductor water, to a plant for processing a semiconductor wafer having a coating apparatus which comprises the control system, and a semiconductor wafer. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing.

Abstract: Semiconductor wafers, are processed using minimally three processing operations: a first double-sided polishing operation, a second chemical-mechanical polishing operation and an epitaxial coating operation. A control system for conducting the method defines at least one operating parameter for the processing operations specifically based on at least one wafer parameter measured on the semiconductor wafer after processing in at least one processing operation, based on an actual state of a processing apparatus with which the respective processing operation is conducted, and based on optimizing wafer parameters for flatness after the wafer has undergone all three processing operations instead of optimizing each individual processing step for optimal flatness.

Abstract: Semiconductor wafers, are processed, using minimally three processing operations: a first double-sided polishing operation, a second chemical-mechanical polishing operation and an epitaxial coating operation. A control system for conducting the method defines at least one operating parameter for the processing operations specifically based on at least one wafer parameter measured on the semiconductor wafer after processing in at least one processing operation, based on an actual state of a processing apparatus with which the respective processing operation is conducted, and based on optimizing wafer parameters for flatness after the wafer has undergone all three processing operations instead of optimizing each individual processing step for optimal flatness.