Abstract: A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Abstract: A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe2Et)2]2}2.

Abstract: Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe2Et)2]2}2.

Abstract: The invention relates to a method for identifying pharmacologically active ingredients which influence the function of cells in the central nervous system. The inventive method comprises the following steps: a) a sample is brought into contact with at least one potential active ingredient, and b) the activity of Raf, especially B-Raf, in the sample is determined.

Abstract: The data carrying signals to be synthesized into an image, to be subject to data compression can be subjected to Fourier transformation by the formation of a Fourier factor WN which is a function of a trigonometric factor &Dgr;C1 utilizing a factor II defined by the relationship: &Dgr;c1=cos x−1=−2 sin2 (x/2) where x=2&pgr;/N and N=number of data points.

Abstract: The process of minimizing the operating voltage of an organic light emitting diode includes the steps of providing a transparent substrate and applying a transparent bottom electrode thereto. It furthermore includes the step of applying to the bottom electrode a semitransparent layer of a metal having a work function in the range from 4 to 7 eV and applying to the semitransparent layer at least one organic functional layer and a top electrode including magnesium and silver.

Abstract: The invention relates to an imaging method. Layer or volume areas are selected by radiating high-frequency pulses and applying a magnetic gradient field which is optionally composed of several individual components. Nuclear magnetic resonances are excited and detected as measured signals in said areas. According to the inventive method, the measured signals are detected in a first acquisition sequence for different echo times. Essentially similar phase positions are selected for different echo times in the acquisition sequence and the acquisition sequence is repeated at least once. The invention also relates to a device for processing image data. Said device comprises at least one memory for storing detected measured data in a kx-dimension, a t-dimension and a ky-dimension. The inventive device is characterised in that said device contains a sorter which rearranges the raw data into a sequence, wherein the data of the ky-dimension is arranged upstream in relation to the t-dimension.

Abstract: The invention relates to a method to operate a nuclear resonance tomograph involving the suppression of image artifacts that are brought about by interfering nuclear spins, a transverse magnetization being generated in a volume of interest by applying a slice-selective HF excitation pulse to nuclear spins in the presence of a first magnetic field gradient and a polarizing magnetic field, and a spin echo being subsequently generated by means of at least a second slice-selective HF pulse in conjunction with a magnetic field gradient.

Abstract: The process of minimizing the operating voltage of an organic light emitting diode includes the steps of providing a transparent substrate and applying a transparent bottom electrode thereto. It furthermore includes the step of applying to the bottom electrode a semitransparent layer of a metal having a work function in the range from 4 to 7 eV and applying to the semitransparent layer at least one organic functional layer and a top electrode including magnesium and silver.

Abstract: An organic light emitting diode includes a transparent bottom electrode located on a substrate, a top electrode, at least one organic functional layer disposed between the bottom electrode and the top electrode and a semitransparent layer located on the bottom electrode. The semitransparent layer is formed of a metal having a work function of between 4 and 7 eV.