Patents by Inventor Stefan Wurm
Stefan Wurm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240042871Abstract: A method for increasing the power during an acceleration process of an electrically operated motor vehicle with at least one electrical machine includes detecting a storage request by at least one control unit and initiating an increase in the rotation speed of a rotor of the electrical machine of the motor by the control unit before an acceleration request, so that kinetic energy is stored in the rotor of the electrical machine. The acceleration request is detected by the control unit and the energy stored in the rotor of the electrical machine is released during the acceleration process.Type: ApplicationFiled: December 2, 2021Publication date: February 8, 2024Inventors: Stefan Wurm, Thomas Traidl, Simon Kaimer
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Patent number: 8766447Abstract: A semiconductor device includes a workpiece and a first material layer disposed over the workpiece. The first material layer has a first number of atoms at a surface. A seed layer is disposed over the first material layer. The seed layer includes a chemisorbed monolayer of a second number of atoms at the surface having a surface coverage of at least 0.5 such that the ratio of the number of first atoms at the surface to the number of second atoms at the surface is no more than 2:1. The second atoms of the seed layer include oxygen or nitrogen.Type: GrantFiled: February 9, 2012Date of Patent: July 1, 2014Assignee: Infineon Technologies AGInventor: Stefan Wurm
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Patent number: 8501373Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.Type: GrantFiled: November 30, 2011Date of Patent: August 6, 2013Assignee: Infineon Technologies AGInventors: Siegfried Schwarzl, Stefan Wurm
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Publication number: 20120139117Abstract: A semiconductor device includes a workpiece and a first material layer disposed over the workpiece. The first material layer has a first number of atoms at a surface. A seed layer is disposed over the first material layer. The seed layer includes a chemisorbed monolayer of a second number of atoms at the surface having a surface coverage of at least 0.5 such that the ratio of the number of first atoms at the surface to the number of second atoms at the surface is no more than 2:1. The second atoms of the seed layer include oxygen or nitrogen.Type: ApplicationFiled: February 9, 2012Publication date: June 7, 2012Applicant: INFINEON TECHNOLOGIES AGInventor: Stefan Wurm
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Patent number: 8148821Abstract: Methods of forming dense seed layers and structures thereof are provided. Seed layers including a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal layer, resulting in a well-defined interface region between the metal layer and a subsequently formed material layer. A seed layer including a monolayer of atoms is formed over the metal layer, the temperature of the workpiece is lowered, and a physisorbed layer is formed over the seed layer, the physisorbed layer including a weakly bound layer of first molecules. A portion of the first molecules in the physisorbed layer are dissociated by irradiating the physisorbed layer with energy, the dissociated atoms of the first molecules being proximate the seed layer. The workpiece is then heated, causing integration of the dissociated atoms of the first molecules of the physisorbed layer into the seed layer and removing the physisorbed layer.Type: GrantFiled: May 15, 2009Date of Patent: April 3, 2012Assignee: Infineon Technologies AGInventor: Stefan Wurm
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Publication number: 20120069311Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.Type: ApplicationFiled: November 30, 2011Publication date: March 22, 2012Applicant: Infineon Technologies AGInventors: Siegfried Schwarzl, Stefan Wurm
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Patent number: 8076055Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.Type: GrantFiled: January 22, 2010Date of Patent: December 13, 2011Assignee: Infineon Technologies AGInventors: Siegfried Schwarzl, Stefan Wurm
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Patent number: 7859648Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.Type: GrantFiled: November 23, 2009Date of Patent: December 28, 2010Assignee: Infineon Technologies AGInventors: Siegfried Schwarzl, Stefan Wurm
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Patent number: 7760341Abstract: Systems and methods for in-situ reflectivity degradation monitoring of optical collectors used in extreme ultraviolet (EUV) lithography processes are described. In one embodiment, a method comprises providing a semiconductor lithography tool employing an EUV source optically coupled to a collector within a vacuum chamber, the collector providing an intermediate focus area, measuring a first signal at the EUV source, measuring a second signal at the intermediate focus area, comparing the first and second signals, and monitoring a reflectivity parameter of the collector based upon the comparison. In another embodiment, a method comprises emitting a signal from a non-EUV light source optically coupled to the collector, measuring a signal reflected by the collector, and monitoring a reflectivity parameter of the collector based upon a comparison between the emitted and measured signals.Type: GrantFiled: September 4, 2007Date of Patent: July 20, 2010Assignees: Sematech, Inc., Infineon TechnologiesInventors: Vivek Bakshi, Stefan Wurm
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Publication number: 20100119981Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.Type: ApplicationFiled: January 22, 2010Publication date: May 13, 2010Inventors: Siegfried Schwarzl, Stefan Wurm
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Patent number: 7709816Abstract: Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) sources used in semiconductor fabrication are disclosed. A method comprises providing a semiconductor fabrication apparatus having a light source that emits in-band and out-of-band radiation, taking a first out-of-band radiation measurement, taking a second out-of-band radiation measurement, and controlling the in-band radiation of the light source, at least in part, based upon a comparison of the first and second out-of-band measurements. An apparatus comprises a detector operable to detect out-of-band EUV radiation emitted by an EUV plasma source, a spectrometer coupled to the electromagnetic detector and operable to measure at least one out-of-band radiation parameter based upon the detected out-of-band EUV radiation, and a controller coupled to the spectrometer and operable to monitor and control the operation of the EUV plasma source based upon the out-of-band measurements.Type: GrantFiled: August 16, 2007Date of Patent: May 4, 2010Assignees: Sematech, Inc., Freescale, Infineon TechnologiesInventors: Vivek Bakshi, Stefan Wurm, Kevin Kemp
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Publication number: 20100066991Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.Type: ApplicationFiled: November 23, 2009Publication date: March 18, 2010Inventors: Siegfried Schwarzl, Stefan Wurm
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Publication number: 20100035431Abstract: Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.Type: ApplicationFiled: October 16, 2009Publication date: February 11, 2010Inventors: Stefan Wurm, Siegfried Schwarzl
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Patent number: 7626682Abstract: Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.Type: GrantFiled: April 13, 2006Date of Patent: December 1, 2009Assignee: Infineon Technologies AGInventors: Stefan Wurm, Siegfried Schwarzl
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Publication number: 20090224406Abstract: Methods of forming dense seed layers and structures thereof are provided. Seed layers including a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal layer, resulting in a well-defined interface region between the metal layer and a subsequently formed material layer. A seed layer including a monolayer of atoms is formed over the metal layer, the temperature of the workpiece is lowered, and a physisorbed layer is formed over the seed layer, the physisorbed layer including a weakly bound layer of first molecules. A portion of the first molecules in the physisorbed layer are dissociated by irradiating the physisorbed layer with energy, the dissociated atoms of the first molecules being proximate the seed layer. The workpiece is then heated, causing integration of the dissociated atoms of the first molecules of the physisorbed layer into the seed layer and removing the physisorbed layer.Type: ApplicationFiled: May 15, 2009Publication date: September 10, 2009Inventor: Stefan Wurm
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Patent number: 7586059Abstract: A substrate labeling system includes a first laser assembly having a first laser and a first lens, a second laser assembly having a second laser and a second lens, and a controller for directing the first laser and the second laser incident on a portion of a subsurface of a substrate to mark the substrate without generating particle defects on a surface of the substrate.Type: GrantFiled: August 27, 2004Date of Patent: September 8, 2009Assignees: Infineon Technologies AG, Advanced Micro Devices Inc.Inventors: Stefan Wurm, Thomas White
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Patent number: 7576005Abstract: Methods of forming dense seed layers and structures thereof are provided. Seed layers including a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal layer, resulting in a well-defined interface region between the metal layer and a subsequently formed material layer. A seed layer including a monolayer of atoms is formed over the metal layer, the temperature of the workpiece is lowered, and a physisorbed layer is formed over the seed layer, the physisorbed layer including a weakly bound layer of first molecules. A portion of the first molecules in the physisorbed layer are dissociated by irradiating the physisorbed layer with energy, the dissociated atoms of the first molecules being proximate the seed layer. The workpiece is then heated, causing integration of the dissociated atoms of the first molecules of the physisorbed layer into the seed layer and removing the physisorbed layer.Type: GrantFiled: October 2, 2007Date of Patent: August 18, 2009Assignee: Infineon Technologies AGInventor: Stefan Wurm
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Patent number: 7547505Abstract: A reflective material is heated to reduce internal stress, and then a capping layer is formed over the reflective material. Heating the reflective material reduces the internal stress of the reflective material. Because the reflective material has reduced internal stress, a more continuous, stable and reliable capping layer is formed that is not subject to stress induced degradation over time due to the relaxing internal stress of the underlying reflective material. Thus, the capping layer remains intact and protects the reflective material residing beneath the capping layer from exposure to contaminants.Type: GrantFiled: January 20, 2005Date of Patent: June 16, 2009Assignees: Infineon Technologies AG, Freescale Semiconductor, Inc.Inventors: Stefan Wurm, Nora V. Edwards
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Publication number: 20090059196Abstract: Systems and methods for in-situ reflectivity degradation monitoring of optical collectors used in extreme ultraviolet (EUV) lithography processes are described. In one embodiment, a method comprises providing a semiconductor lithography tool employing an EUV source optically coupled to a collector within a vacuum chamber, the collector providing an intermediate focus area, measuring a first signal at the EUV source, measuring a second signal at the intermediate focus area, comparing the first and second signals, and monitoring a reflectivity parameter of the collector based upon the comparison. In another embodiment, a method comprises emitting a signal from a non-EUV light source optically coupled to the collector, measuring a signal reflected by the collector, and monitoring a reflectivity parameter of the collector based upon a comparison between the emitted and measured signals.Type: ApplicationFiled: September 4, 2007Publication date: March 5, 2009Inventors: Vivek Bakshi, Stefan Wurm
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Publication number: 20090046273Abstract: Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) sources used in semiconductor fabrication are disclosed. A method comprises providing a semiconductor fabrication apparatus having a light source that emits in-band and out-of-band radiation, taking a first out-of-band radiation measurement, taking a second out-of-band radiation measurement, and controlling the in-band radiation of the light source, at least in part, based upon a comparison of the first and second out-of-band measurements. An apparatus comprises a detector operable to detect out-of-band EUV radiation emitted by an EUV plasma source, a spectrometer coupled to the electromagnetic detector and operable to measure at least one out-of-band radiation parameter based upon the detected out-of-band EUV radiation, and a controller coupled to the spectrometer and operable to monitor and control the operation of the EUV plasma source based upon the out-of-band measurements.Type: ApplicationFiled: August 16, 2007Publication date: February 19, 2009Inventors: Vivek Bakshi, Stefan Wurm, Kevin Kemp