Patents by Inventor Stefan Wurn

Stefan Wurn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7341875
    Abstract: To integrate a capacitor device (40) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) are provided to be formed directly underneath or directly above the material region (30) which has the memory elements (20), in such a way that as a result at least a part of the material region (30) which has the memory elements (20) functions at least as part of the respective dielectric (45) between the electrodes devices (43, 44).
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: March 11, 2008
    Assignee: Infineon Technologies AG
    Inventors: Joachim Nuetzel, Till Schloesser, Siegfried Schwarzl, Stefan Wurn
  • Publication number: 20070082413
    Abstract: To integrate a capacitor device (40) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) are provided to be formed directly underneath or directly above the material region (30) which has the memory elements (20), in such a way that as a result at least a part of the material region (30) which has the memory elements (20) functions at least as part of the respective dielectric (45) between the electrode devices (43, 44).
    Type: Application
    Filed: May 21, 2002
    Publication date: April 12, 2007
    Inventors: Joachim Nuetzel, Till Schloesser, Siegfried Schwarzl, Stefan Wurn