Patents by Inventor Stefanie Chaplin

Stefanie Chaplin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturing
    Patent number: 6162711
    Abstract: A method and structure providing a dual layer silicon gate film having a uniform boron distribution therein and an ordered, uniform grain structure. Rapid thermal annealing is used to cause the diffusion of boron from an originally doped film to an originally undoped film, resulting in a uniform boron distribution within the structure, thereby rendering the structure resistant to vertical and lateral diffusion of the boron during subsequent processing at elevated temperatures.
    Type: Grant
    Filed: January 15, 1999
    Date of Patent: December 19, 2000
    Assignee: Lucent Technologies, Inc.
    Inventors: Yi Ma, Stefanie Chaplin, Stephen Carl Kuehne, Brittin Charles Kane, Michael A. Laughery