Patents by Inventor Stefanie Rammelsberger
Stefanie Rammelsberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10340430Abstract: An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.Type: GrantFiled: June 27, 2016Date of Patent: July 2, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Leirer, Björn Hoxhold, Stefanie Rammelsberger
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Patent number: 10290784Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.Type: GrantFiled: May 12, 2016Date of Patent: May 14, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Korbinian Perzlmaier, Stefanie Rammelsberger, Anna Kasprzak-Zablocka, Julian Ikonomov, Christian Leirer
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Patent number: 10283686Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.Type: GrantFiled: January 11, 2016Date of Patent: May 7, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Anna Kasprzak-Zablocka, Stefanie Rammelsberger, Julian Ikonomov
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Patent number: 10164143Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: GrantFiled: July 27, 2017Date of Patent: December 25, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
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Patent number: 10043958Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: August 7, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Publication number: 20180198044Abstract: An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.Type: ApplicationFiled: June 27, 2016Publication date: July 12, 2018Inventors: Christian Leirer, Björn Hoxhold, Stefanie Rammelsberger
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Patent number: 10008649Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: June 26, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Publication number: 20180145235Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.Type: ApplicationFiled: May 12, 2016Publication date: May 24, 2018Inventors: Korbinian PERZLMAIER, Stefanie RAMMELSBERGER, Anna KASPRZAK-ZABLOCKA, Julian IKONOMOV, Christian LEIRER
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Publication number: 20180013043Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.Type: ApplicationFiled: January 11, 2016Publication date: January 11, 2018Inventors: Korbinian Perlmaier, Anna Kasprzak-Zablocka, Stefanie Rammelsberger, Julian Ikonomov
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Publication number: 20170324000Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: ApplicationFiled: July 27, 2017Publication date: November 9, 2017Inventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
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Patent number: 9761770Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.Type: GrantFiled: January 14, 2014Date of Patent: September 12, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Johann Eibl, Sebastian Taeger, Lutz Höppel, Karl Engl, Stefanie Rammelsberger, Markus Maute, Michael Huber, Rainer Hartmann, Georg Hartung
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Patent number: 9722136Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: GrantFiled: April 14, 2016Date of Patent: August 1, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
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Publication number: 20170148962Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: ApplicationFiled: January 10, 2017Publication date: May 25, 2017Inventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Patent number: 9577165Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.Type: GrantFiled: August 23, 2012Date of Patent: February 21, 2017Assignee: OSRAM Opto Semiconductor GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Publication number: 20160225943Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: ApplicationFiled: April 14, 2016Publication date: August 4, 2016Inventors: KARL ENGL, MARKUS MAUTE, STEFANIE RAMMELSBERGER, ANNA KASPRZAK-ZABLOCKA
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Patent number: 9343637Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: GrantFiled: February 7, 2012Date of Patent: May 17, 2016Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
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Publication number: 20150372203Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.Type: ApplicationFiled: January 14, 2014Publication date: December 24, 2015Inventors: Johann Eibl, Sebastian Taeger, Lutz Höppel, Karl Engl, Stefanie Rammelsberger, Markus Maute, Michael Huber, Rainer Hartmann, Georg Hartung
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Publication number: 20140319566Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.Type: ApplicationFiled: August 23, 2012Publication date: October 30, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Patent number: 8872209Abstract: A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.Type: GrantFiled: February 15, 2011Date of Patent: October 28, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Markus Maute, Karl Engl, Stefanie Rammelsberger, Nikolaus Gmeinwieser, Johann Eibl
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Publication number: 20140021507Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: ApplicationFiled: February 7, 2012Publication date: January 23, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka