Patents by Inventor Stefanie Steiner

Stefanie Steiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NOVEL COMPOUNDS
    Publication number: 20240132471
    Abstract: The invention relates to novel compounds having the general formula Ib wherein R1, R2, R1, R4, R5 and Z are as described herein, composition including the compounds and methods of using the compounds.
    Type: Application
    Filed: November 30, 2023
    Publication date: April 25, 2024
    Applicant: Hoffmann-La Roche Inc.
    Inventors: Lea Aurelie BOUCHE, Wolfgang GUBA, Georg JAESCHKE, Stefanie Katharina MESCH, Angélique PATINY-ADAM, Christian SCHNIDER, Sandra STEINER, Andreas Michael TOSSTORFF
  • High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning
    Patent number: 8652956
    Abstract: In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: February 18, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Sven Beyer, Klaus Hempel, Thilo Scheiper, Stefanie Steiner
  • HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS USING A MASKING REGIME PRIOR TO GATE PATTERNING
    Publication number: 20120261765
    Abstract: In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.
    Type: Application
    Filed: June 26, 2012
    Publication date: October 18, 2012
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Sven Beyer, Klaus Hempel, Thilo Scheiper, Stefanie Steiner
  • High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning
    Patent number: 8232188
    Abstract: In a replacement gate approach in sophisticated semiconductor devices, the place-holder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.
    Type: Grant
    Filed: October 15, 2010
    Date of Patent: July 31, 2012
    Assignee: GlobalFoundries Inc.
    Inventors: Sven Beyer, Klaus Hempel, Thilo Scheiper, Stefanie Steiner
  • HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS USING A MASKING REGIME PRIOR TO GATE PATTERNING
    Publication number: 20110127613
    Abstract: In a replacement gate approach in sophisticated semiconductor devices, the place-holder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.
    Type: Application
    Filed: October 15, 2010
    Publication date: June 2, 2011
    Inventors: Sven Beyer, Klaus Hempel, Thilo Scheiper, Stefanie Steiner