Patents by Inventor Stefano Falduti

Stefano Falduti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Adjustable NAND write performance
    Patent number: 11526277
    Abstract: Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: December 13, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Giuseppe Cariello, Mauro Luigi Sali, Stefano Falduti, Ugo Russo
  • ADJUSTABLE NAND WRITE PERFORMANCE
    Publication number: 20210141530
    Abstract: Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.
    Type: Application
    Filed: January 25, 2021
    Publication date: May 13, 2021
    Inventors: Giuseppe Cariello, Mauro Luigi Sali, Stefano Falduti, Ugo Russo
  • Adjustable NAND write performance
    Patent number: 10901622
    Abstract: Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: January 26, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Giuseppe Cariello, Mauro Luigi Sali, Stefano Falduti, Ugo Russo
  • ADJUSTABLE NAND WRITE PERFORMANCE
    Publication number: 20200210067
    Abstract: Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.
    Type: Application
    Filed: December 28, 2018
    Publication date: July 2, 2020
    Inventors: Giuseppe Cariello, Mauro Luigi Sali, Stefano Falduti, Ugo Russo