Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

Abstract: An image sensor, comprises a three-dimensional integrated circuit comprising a stack with at least a top-, a middle-, and a bottom-tier. The bottom-tier (BTR) comprises a first array of photodetectors, denoted first pixels (PD1), and the first pixels being sensitive in the visual and/or near-infrared spectral range. The middle-tier (MTR) comprises a second array of photodetectors, denoted second pixels (PD2), and the second pixels being sensitive in the short-wave infrared spectral range. The top-tier (TTR) comprises an application-specific integrated circuit, denoted ASIC, operable to read out the arrays of the first and second photodiodes (PD1, PD2).

Abstract: The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.

Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

Abstract: The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.

Abstract: This invention relates to a sectional hydraulic valve and a truck mounted forklift incorporating the distributor. The sectional hydraulic valve comprises an inlet cover, a plurality of hydraulic sections and an end cap. The hydraulic sections each having a pump gallery, a tank gallery, an A port, a B port, a spool and a remote pilot gallery. The end cap comprises a pump port coupled to the pump gallery, a tank port coupled to the tank gallery and a connecting conduit between the pump port and the tank port. The end cap further comprises a remote pilot gallery port coupled to the remote pilot gallery, a fluid passageway between the remote pilot gallery port and the connecting conduit, and a valve assembly operable to selectively permit or restrict flow of hydraulic fluid between the connecting conduit in the end cap and the remote pilot gallery in the hydraulic section.

Abstract: This invention relates to a sectional hydraulic valve and a truck mounted forklift incorporating the distributor. The sectional hydraulic valve comprises an inlet cover, a plurality of hydraulic sections and an end cap. The hydraulic sections each having a pump gallery, a tank gallery, an A port, a B port, a spool and a remote pilot gallery. The end cap comprises a pump port coupled to the pump gallery, a tank port coupled to the tank gallery and a connecting conduit between the pump port and the tank port. The end cap further comprises a remote pilot gallery port coupled to the remote pilot gallery, a fluid passageway between the remote pilot gallery port and the connecting conduit, and a valve assembly operable to selectively permit or restrict flow of hydraulic fluid between the connecting conduit in the end cap and the remote pilot gallery in the hydraulic section.