Abstract: There is provided a metrologic methodology, useful for in-situ, non-destructive monitoring, comprising a combination of novel signal generation and analysis techniques, computational techniques, and laser infrared radiometric instrumental configurations for measuring thermal and electronic properties of industrial semiconductor wafers and non-electronic materials. This methodology includes: the combination of the frequency sweep (Chirp) and conventional frequency scan techniques for rapid measurement of electronic and thermal transport properties of semiconductor and engineering materials/devices. The common-mode rejection demodulation (bi-modal pulse) method for detection of very weak inhomogeneities in materials, based on generating a real time periodic waveform consisting of two incident square-wave pulses.