Patents by Inventor Stefano SANGUINETTI

Stefano SANGUINETTI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11521852
    Abstract: Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (12), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer (11) on a Si substrate (12); and 2) growing a second InGaN-based layer on the first InGaN-based layer (11).
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: December 6, 2022
    Assignee: South China Normal University
    Inventors: Richard Notzel, Peng Wang, Stefano Sanguinetti, Guofu Zhou
  • Publication number: 20210336003
    Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.
    Type: Application
    Filed: January 11, 2019
    Publication date: October 28, 2021
    Inventors: Richard Notzel, Peng Wang, Stefano Sanguinetti, Guofu Zhou
  • Publication number: 20210272802
    Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.
    Type: Application
    Filed: December 19, 2018
    Publication date: September 2, 2021
    Inventors: Richard Notzel, Peng Wang, Stefano Sanguinetti, Guofu Zhou
  • Patent number: 10644303
    Abstract: It is described a method for realizing catalytically active electrochemical electrodes with maximized surface area. In the method, InGaN is deposited epitaxially in form of a thin layer on a Silicon substrate exposing a (111) crystal fac, thus forcing the InGaN electrode material to grow exposing a catalytically active surface. The substrate is then removed, the InGaN layer is made into fragments and these are transferred onto a conductive support with one-, two- or three-dimensional structure which can be a wire, a two-dimensional conductive foil which, possibly folded, or a three-dimensional conductive fabric, sponge or cage-like structure. It is thus possible to obtain an InGaN-based electrode with increased surface area and exposing surfaces with high catalytic activity.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: May 5, 2020
    Assignee: UNIVERSITÁ DEGLI STUDI DI MILANO BICOCCA
    Inventors: Richard Noetzel, Stefano Sanguinetti
  • Publication number: 20190296173
    Abstract: The invention refers to a hybrid device, monolithically integrating a photoanode with a silicon photovoltaic cell, capable of splitting water into hydrogen and oxygen when irradiated by visible or UV light; the invention also refers to a method for producing the hybrid device.
    Type: Application
    Filed: July 20, 2017
    Publication date: September 26, 2019
    Applicant: Universita' Deglistudi Di Milano Bicocca
    Inventors: Richard NOETZEL, Stefano SANGUINETTI
  • Publication number: 20190109319
    Abstract: It is described a method for realizing catalytically active electrochemical electrodes with maximized surface area. In the method, InGaN is deposited epitaxially in form of a thin layer on a Silicon substrate exposing a (111) crstal fac, thus forcing the InGaN electrode material to grow exposing a catalytically active surface. The substrate is then removed, the InGaN layer is made into fragments and these are transferred onto a conductive support with one-, two- or three-dimensional structure which can be a wire, a two-dimensional conductive foil which, possibly folded, or a three-dimensional conductive fabric, sponge or cage-like structure. It is thus possible to obtain an InGaN-based electrode with increased surface area and exposing surfaces with high catalytic activity.
    Type: Application
    Filed: March 14, 2017
    Publication date: April 11, 2019
    Inventors: Richard NOETZEL, Stefano SANGUINETTI