Patents by Inventor Stefano Sanvito

Stefano Sanvito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cesium-niobium-chalcogenide compounds and semiconductor devices including the same
    Patent number: 11866344
    Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: January 9, 2024
    Assignees: Trinity College Dublin, Qatar Foundation for Education, Science and Community Development
    Inventors: Fadwa El-Mellouhi, Heesoo Park, Nouar Tabet, Fahhad Alharbi, Stefano Sanvito
  • CESIUM-NIOBIUM-CHALCOGENIDE COMPOUNDS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
    Publication number: 20210269326
    Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
    Type: Application
    Filed: February 5, 2019
    Publication date: September 2, 2021
    Inventors: Fadwa EL-MELLOUHI, Heesoo PARK, Nouar TABET, Fahhad ALHARBI, Stefano SANVITO
  • Photovoltaic perovskite oxychalcogenide material and optoelectronic devices including the same
    Patent number: 10553367
    Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: February 4, 2020
    Assignees: QATAR FOUNDATION, TRINITY COLLEGE DUBLIN
    Inventors: Fadwa El-Mellouhi, Nouar Tabet, Fahhad Hussain Alharbi, Stefano Sanvito, Heesoo Park
  • PHOTOVOLTAIC PEROVSKITE OXYCHALCOGENIDE MATERIAL AND OPTOELECTRONIC DEVICES INCLUDING THE SAME
    Publication number: 20190122829
    Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.
    Type: Application
    Filed: October 19, 2018
    Publication date: April 25, 2019
    Inventors: Fadwa EL-MELLOUHI, Nouar TABET, Fahhad Hussain ALHARBI, Stefano SANVITO, Heesoo PARK
  • Phase-controlled field effect transistor device and method for manufacturing thereof
    Patent number: 8164086
    Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centers may be modulated.
    Type: Grant
    Filed: September 17, 2009
    Date of Patent: April 24, 2012
    Assignee: The Provost, Fellows and Scholars of the Colege of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin
    Inventors: John Boland, Stefano Sanvito, Borislav Naydenov
  • Phase-controlled field effect transistor device and method for manufacturing thereof
    Publication number: 20100084631
    Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centres may be modulated.
    Type: Application
    Filed: September 17, 2009
    Publication date: April 8, 2010
    Inventors: John Boland, Stefano Sanvito, Borislav Naydenov
  • Molecular quantum interference device
    Publication number: 20100065821
    Abstract: A molecular quantum interference device is provided. A method for the design of such devices is also provided, the method including modelling of device performance.
    Type: Application
    Filed: September 17, 2008
    Publication date: March 18, 2010
    Inventors: John Boland, Stefano Sanvito, Zekan Qian, Rui Li, Shimin Hou