Abstract: There is a diaryloxybenzoheterodiazole compound di-substituted with thienothiophenic groups having general formula (Ia): The diaryloxybenzoheterodiazole compound di-substituted with thienothiophenic groups having general formula (Ia) can be advantageously used as a spectrum converter in luminescent solar concentrators (LSCS) capable, in turn, of improving the performance of photovoltaic devices (or solar devices), selected for example, between photovoltaic cells (or solar cells), photovoltaic modules (or solar modules), either on a rigid support, or on a flexible support. More particularly, said photovoltaic devices (or solar devices) can be advantageously used in the construction of greenhouses.

Abstract: Apparatuses and methods for commands to perform wear leveling operations are described herein. An example apparatus may include a memory configured to receive a wear leveling command and to perform a wear leveling operation responsive to the wear leveling command. The memory may further be configured to recommend a wear leveling command be provided to the memory responsive to a global write count exceeding a threshold. The global write count may be indicative of a number of write operations performed by the memory since the memory performed a wear leveling operation.

Abstract: Apparatuses and methods for providing data to a configurable storage area are described herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for commands to perform wear leveling operations are described herein. An example apparatus may include a memory configured to receive a wear leveling command and to perform a wear leveling operation responsive to the wear leveling command. The memory may further be configured to recommend a wear leveling command be provided to the memory responsive to a global write count exceeding a threshold. The global write count may be indicative of a number of write operations performed by the memory since the memory performed a wear leveling operation.

Abstract: Apparatuses and methods for commands to perform wear leveling operations are described herein. An example apparatus may include a memory configured to receive a wear leveling command and to perform a wear leveling operation responsive to the wear leveling command. The memory may further be configured to recommend a wear leveling command be provided to the memory responsive to a global write count exceeding a threshold. The global write count may be indicative of a number of write operations performed by the memory since the memory performed a wear leveling operation.

Abstract: Apparatuses and methods for providing data to a configurable storage area are described herein. An example apparatus mau include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data to a configurable storage area are described herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: New sulfide metal catalysts are described, containing Ni, Mo and W, an element Z selected from Si, Al and mixtures thereof, and possibly an organic residue, obtained by sulfidation of mixed oxide precursors, also new, characterized in that they comprise an amorphous phase and a wolframite iso structural crystalline phase, the crystallinity degree of said mixed oxides being higher than 0 and lower than 100%, preferably higher than 0 and lower than 70%. The catalysts of the invention are useful as hydrotreatment catalysts, and in particular as hydrodesulfurization, hydrodenitrogenation and/or hydrodearomatization catalysts.

Abstract: New sulfided metal catalysts are described, containing a metal X selected from Ni, Co and mixtures thereof, a metal Y selected from Mo, W and mixtures thereof, an element Z selected from Si, Al and mixtures thereof, and possibly an organic residue, obtained by the sulfidation of mixed oxide precursors, also new, having general formula (A) XaYbZcOd.

Abstract: Apparatuses and methods for providing data to a configurable storage area are described herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data to a configurable storage area are disclosed herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data to a configurable storage area are disclosed herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data to a configurable storage area are disclosed herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a first write command and may further be configured to cause the buffer to store the data in the array responsive, at least in part, to a flush command. The memory control unit may further be configured to interrupt the flush command to prepare for a read command or a second write command and resume the flush command once the read command or the second write command is performed.

Abstract: New sulfide metal catalysts are described, containing Ni, Mo and W, an element Z selected from Si, Al and mixtures thereof, and possibly an organic residue, obtained by sulfidation of mixed oxide precursors, also new, characterized in that they comprise an amorphous phase and a wolframite iso structural crystalline phase, the crystallinity degree of said mixed oxides being higher than 0 and lower than 100%, preferably higher than 0 and lower than 70%. The catalysts of the invention are useful as hydrotreatment catalysts, and in particular as hydrodesulfurization, hydrodenitrogenation and/or hydrodearomatization catalysts.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a first write command and may further be configured to cause the buffer to store the data in the array responsive, at least in part, to a flush command. The memory control unit may further be configured to interrupt the flush command to prepare for a read command or a second write command and resume the flush command once the read command or the second write command is performed.

Abstract: Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The data may include data intended to be stored in the storage area. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a write command and may further be configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Abstract: New sulfide metal catalysts are described, containing Ni, Mo and W, an element Z selected from Si, Al and mixtures thereof, and possibly an organic residue, obtained by sulfidation of mixed oxide precursors, also new, characterized in that they comprise an amorphous phase and a wolframite isostructural crystalline phase, the crystallinity degree of said mixed oxides being higher than 0 and lower than 100%, preferably higher than 0 and lower than 70%. The catalysts of the invention are useful as hydrotreatment catalysts, and in particular as hydrodesulfurization, hydrodenitrogenation and/or hydrodearomatization catalysts.

Abstract: New sulfided metal catalysts are described, containing a metal X selected from Ni, Co and mixtures thereof, a metal Y selected from Mo, W and mixtures thereof, an element Z selected from Si, Al and mixtures thereof, and possibly an organic residue, obtained by the sulfidation of mixed oxide precursors, also new, having general formula (A) Xa Yb Zc Od.

Abstract: New sulfided metal catalysts are described, containing a metal X selected from Ni, Co and mixtures thereof, a metal Y selected from Mo, W and mixtures thereof, an element Z selected from Si, Al and mixtures thereof, and possibly an organic residue, obtained by the sulfidation of mixed oxide precursors, also new, having general formula (A) XaYbZcOd.