Patents by Inventor Stefano ZANCHI

Stefano ZANCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device
    Patent number: 11798630
    Abstract: A memory device includes programmable memory cells and a programming circuit for programming a selected memory cell to a target logic state by applying one or more programming current pulses. A temperature sensor operates to sense a temperature of the memory device. A reading circuit reads a current logic state of the selected memory cell after a predetermined programming current pulse of the programming current pulses. The reading circuit includes a sensing circuit that senses a current logic state of the selected memory cell according to a comparison between a reading electric current depending on the current logic state of the selected memory cell and a reference current. An adjusting circuit adjusts one or the other of the reading electric current and the reference electric current to be provided to the sensing circuit according to the temperature of the memory device.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: October 24, 2023
    Assignee: STMicroelectronics S.r.l.
    Inventors: Marcella Carissimi, Fabio Enrico Carlo Disegni, Chantal Auricchio, Cesare Torti, Davide Manfre', Laura Capecchi, Emanuela Calvetti, Stefano Zanchi
  • MEMORY DEVICE
    Publication number: 20220068395
    Abstract: A memory device includes programmable memory cells and a programming circuit for programming a selected memory cell to a target logic state by applying one or more programming current pulses. A temperature sensor operates to sense a temperature of the memory device. A reading circuit reads a current logic state of the selected memory cell after a predetermined programming current pulse of the programming current pulses. The reading circuit includes a sensing circuit that senses a current logic state of the selected memory cell according to a comparison between a reading electric current depending on the current logic state of the selected memory cell and a reference current. An adjusting circuit adjusts one or the other of the reading electric current and the reference electric current to be provided to the sensing circuit according to the temperature of the memory device.
    Type: Application
    Filed: August 20, 2021
    Publication date: March 3, 2022
    Applicant: STMicroelectronics S.r.l.
    Inventors: Marcella CARISSIMI, Fabio Enrico Carlo DISEGNI, Chantal AURICCHIO, Cesare TORTI, Davide MANFRE', Laura CAPECCHI, Emanuela CALVETTI, Stefano ZANCHI