Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip in a photonic transceiver, wherein photonic, electronic, or optoelectronic devices may be integrated in a front surface of the CMOS photonic chip. Optical couplers, such as grating couplers, may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The optical signals may be coupled to the optical couplers via a light path etched in the chips, which may be refilled with silicon dioxide. The chips may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

Abstract: A method and system for single laser bidirectional links are disclosed and may include communicating a high speed optical signal from a transmit CMOS photonics chip to a receive CMOS photonics chip and communicating a low-speed optical signal from the receive CMOS photonics chip to the transmit CMOS photonics chip via one or more optical fibers. The optical signals may be coupled to and from the CMOS photonics chips utilizing single-polarization grating couplers. The optical signals may be coupled to and from the CMOS photonics chips utilizing polarization-splitting grating couplers. The optical signals may be amplitude or phase modulated. The optical fibers may comprise single-mode or polarization-maintaining fibers. A polarization of the high-speed optical signal may be configured before communicating it over the single-mode fibers. The low-speed optical signal may be generated by modulating the received high-speed optical signal or from a portion of the received high-speed optical signal.

Abstract: Methods and systems for a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The CMOS chip may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted into the photonically enabled CMOS chip, which may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The CMOS chip may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Abstract: Methods and systems for stabilized directional couplers are disclosed and may include a system comprising first and second directional couplers formed by first and second waveguides, where one of the waveguides may comprise a length extender between the directional couplers. The directional couplers may be formed by reduced spacing between the waveguides on opposite sides of the length extender. An input optical signal may be communicated into one of the waveguides, where at least a portion of the input optical signal may be coupled between the waveguides in the first directional coupler and at least a portion of the coupled optical signal may be coupled between the waveguides in the second directional coupler. Optical signals may be communicated out of the system with magnitudes at a desired percentage of the input optical signal. The length extender may add phase delay for signals in one of the first and second waveguides.

Abstract: Methods and systems for a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The CMOS chip may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted into the photonically enabled CMOS chip, which may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The CMOS chip may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip in a photonic transceiver, wherein photonic, electronic, or optoelectronic devices may be integrated in a front surface of the CMOS photonic chip. Optical couplers, such as grating couplers, may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The optical signals may be coupled to the optical couplers via a light path etched in the chips, which may be refilled with silicon dioxide. The chips may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

Abstract: Methods and systems for a light source assembly for coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The light source assembly may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted out of the assembly to grating couplers in the photonically enabled CMOS chip. The assembly may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The assembly may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of one or more of a plurality of CMOS photonic chips comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chips and optical couplers may receive the optical signals in the front surface of the chips. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The optical signals may be coupled to the optical couplers via a light path etched in the chips, which may be refilled with silicon dioxide. The chips may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract: Methods and systems for a multi-core fiber connector are disclosed and may include communicating optical signals in a fiber comprising a multi-core. The connectors may comprise dimensions to fit one or more of: SC, LC, FC, or MU connectors. The optical signals may be collimated utilizing a lens in the connectors, and may comprise a graded-index (GRIN) lens or a ball lens. The connectors may comprise a ferrule assembly that encompasses an end of the optical fiber and is at least partially within a stem assembly. The ferrule assembly may comprise zirconia and the stem assembly may comprise stainless steel. The lens may be fixed adjacent to the ferrule assembly utilizing a stainless steel tube. The collimated optical signals may be communicated to a receiving lens that may focus the collimated optical signals onto a plurality of optical cores in a receiving optical fiber.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of one or more of a plurality of CMOS photonic chips comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chips and optical couplers may receive the optical signals in the front surface of the chips. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The optical signals may be coupled to the optical couplers via a light path etched in the chips, which may be refilled with silicon dioxide. The chips may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more grating couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Abstract: Methods and systems for a light source assembly for coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The light source assembly may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted out of the assembly to grating couplers in the photonically enabled CMOS chip. The assembly may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The assembly may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more grating couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices with at least a portion of each of the wafers bonded together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices bonded to at least a portion of each of the wafers together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions.

Abstract: Methods and systems for a light source assembly supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The assembly may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source assembly to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source assembly may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Abstract: A method and system for single laser bidirectional links are disclosed and may include communicating a high speed optical signal from a transmit CMOS photonics chip to a receive CMOS photonics chip and communicating a low-speed optical signal from the receive CMOS photonics chip to the transmit CMOS photonics chip via one or more optical fibers. The optical signals may be coupled to and from the CMOS photonics chips utilizing single-polarization grating couplers. The optical signals may be coupled to and from the CMOS photonics chips utilizing polarization-splitting grating couplers. The optical signals may be amplitude or phase modulated. The optical fibers may comprise single-mode or polarization-maintaining fibers. A polarization of the high-speed optical signal may be configured before communicating it over the single-mode fibers. The low-speed optical signal may be generated by modulating the received high-speed optical signal or from a portion of the received high-speed optical signal.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more grating couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.