Abstract: Various embodiments include an integrated circuit (IC) structure having: a chip control logic; a chip power system connected with the chip control logic; and a voltage island connected with the chip control logic and the chip power system, the voltage island including: an interface component for interfacing with the chip power system and the chip control logic; a logic island connected with the interface component; and a voltage island power system connected with the interface component and the logic island, the voltage island power system independently controlling a voltage supplied to the logic island.

Abstract: Various embodiments include an integrated circuit (IC) structure having: a chip control logic; a chip power system connected with the chip control logic; and a voltage island connected with the chip control logic and the chip power system, the voltage island including: an interface component for interfacing with the chip power system and the chip control logic; a logic island connected with the interface component; and a voltage island power system connected with the interface component and the logic island, the voltage island power system independently controlling a voltage supplied to the logic island.

Abstract: Various embodiments include an integrated circuit (IC) structure having: a chip control logic; a chip power system connected with the chip control logic; and a voltage island connected with the chip control logic and the chip power system, the voltage island including: an interface component for interfacing with the chip power system and the chip control logic; a logic island connected with the interface component; and a voltage island power system connected with the interface component and the logic island, the voltage island power system independently controlling a voltage supplied to the logic island.

Abstract: Various embodiments include an integrated circuit (IC) structure having: a chip control logic; a chip power system connected with the chip control logic; and a voltage island connected with the chip control logic and the chip power system, the voltage island including: an interface component for interfacing with the chip power system and the chip control logic; a logic island connected with the interface component; and a voltage island power system connected with the interface component and the logic island, the voltage island power system independently controlling a voltage supplied to the logic island.

Abstract: A memory including an array of memory cells and a control circuit. The control circuit is configured to control partial array self refreshes and to switch from one partial array self refresh to another partial array self refresh. Data in memory cells that are refreshed via the one partial array self refresh and refreshed via the other partial array self refresh is retained in the memory cells from before a first switch from the one partial array self refresh to the other partial array self refresh to after the first switch.

Abstract: An integrated circuit includes a memory array, first pads, and second pads. The integrated circuit is configured to operate in a first mode and in a second mode. The first mode includes receiving data signals on the first pads and address signals on the second pads to access the memory array. The second mode includes receiving multiplexed data signals and address signals on the first pads to access the memory array.

Abstract: A memory including periphery circuitry configured to support multiple banks of memory cells. The periphery circuitry includes switches that are set to put the periphery circuitry into a first mode to support a portion of the multiple banks of memory cells and a second mode to support all of the multiple banks of memory cells.

Abstract: Embodiments of the invention generally related to arrangements of decoupling capacitor arrays in an integrated circuit. A decoupling capacitor array may include a plurality of bit lines that are electrically coupled to each other, a plurality of word lines that are electrically coupled to each other, and a plurality of decoupling capacitors, each decoupling capacitor coupled to a respective bit line and word line. The decoupling capacitor array may further include an access circuit electrically coupled to the plurality of word lines and a power grid, the access circuit being configured to either connect or disconnect the decoupling capacitor array to the power grid based on a control signal.

Abstract: A trimming system for determining a trim solution for a semiconductor device includes an internal value generating circuit for generating an internal value based upon a counter value. The relationship between the internal delay value and an external reference is compared to determine if the counter value is a possible trim solution, while predetermined counter values are excluded as a trim solution.

Abstract: Embodiments of the invention generally provide methods, systems, and apparatus for testing decoupling capacitors of an integrated circuit. A decoupling capacitor may be disconnected from the power grid of the integrated circuit during testing. The voltage of the decoupling capacitor may be compared to the voltage of a reference capacitor to determine whether the decoupling capacitor is defective. If the decoupling capacitor is determined to be defective, the decoupling capacitor is not reconnected to the power grid, thereby reducing the leakage currents in the integrated circuit.

Abstract: Embodiments of the invention generally related to arrangements of decoupling capacitor arrays in an integrated circuit. A decoupling capacitor array may include a plurality of bit lines that are electrically coupled to each other, a plurality of word lines that are electrically coupled to each other, and a plurality of decoupling capacitors, each decoupling capacitor coupled to a respective bit line and word line. The decoupling capacitor array may further include an access circuit electrically coupled to the plurality of word lines and a power grid, the access circuit being configured to either connect or disconnect the decoupling capacitor array to the power grid based on a control signal.

Abstract: An integrated circuit includes a memory array, first pads, and second pads. The integrated circuit is configured to operate in a first mode and in a second mode. The first mode includes receiving data signals on the first pads and address signals on the second pads to access the memory array. The second mode includes receiving multiplexed data signals and address signals on the first pads to access the memory array.

Abstract: A memory including periphery circuitry configured to support multiple banks of memory cells. The periphery circuitry includes switches that are set to put the periphery circuitry into a first mode to support a portion of the multiple banks of memory cells and a second mode to support all of the multiple banks of memory cells.

Abstract: A memory including an array of memory cells and a control circuit. The control circuit is configured to control partial array self refreshes and to switch from one partial array self refresh to another partial array self refresh. Data in memory cells that are refreshed via the one partial array self refresh and refreshed via the other partial array self refresh is retained in the memory cells from before a first switch from the one partial array self refresh to the other partial array self refresh to after the first switch.

Abstract: Methods and circuits for detecting variations in signal propagation rates within an electronic device, and for adjusting the output timing of the device in response to the variations in signal propagation rates. According to an embodiment of the invention, a signal may be propagated through an uncompensated delay chain and a compensated delay chain. If the signal passes through the compensated chain slower than through the uncompensated delay chain, then the device may delay a clock signal such that the output timing of the device will remain within the specification parameters. In contrast, if the signal passes through the uncompensated delay chain slower than through the compensated delay chain, the device may not delay the received clock signal such that the output timing of the device will remain within specification parameters.

Abstract: Methods and circuits for detecting variations in signal propagation rates within an electronic device, and for adjusting the output timing of the device in response to the variations in signal propagation rates. According to an embodiment of the invention, a signal may be propagated through an uncompensated delay chain and a compensated delay chain. If the signal passes through the compensated chain slower than through the uncompensated delay chain, then the device may delay a clock signal such that the output timing of the device will remain within the specification parameters. In contrast, if the signal passes through the uncompensated delay chain slower than through the compensated delay chain, the device may not delay the received clock signal such that the output timing of the device will remain within specification parameters.

Abstract: A redundancy replacement scheme for repairing a faulty memory cell including memory cells arranged in memory blocks containing word lines and column select lines. The redundancy replacement scheme including replacing the faulty memory cell in a second memory block with a spare memory cell in the second memory block based on a decoded address of a first memory block.

Abstract: A trimming system for determining a trim solution for a semiconductor device includes an internal value generating circuit for generating an internal value based upon a counter value. The relationship between the internal delay value and an external reference is compared to determine if the counter value is a possible trim solution, while predetermined counter values are excluded as a trim solution.

Abstract: A random access memory comprises an array of memory cells and a controller. The controller is configured to access the array of memory cells in a double data rate prefetch mode in response to a read command and in a single data rate mode after the first double data rate access is completed.

Abstract: An array of multiple off chip drivers on an integrated circuit (IC) chip has reduced synchronous switching output timing error (TSSO) at high speeds of operation. The array includes a pair of low resistance buses to provide charge and discharge paths for the outputs, a plurality of terminals connecting the respective drivers between the buses, the resistance of each terminal being substantially greater than the resistance of either bus, and a plurality of capacitors connected internally of the respective drivers. Each driver has an input for receiving binary data from a memory unit and an output terminal which is switched in accordance with the binary input data to a higher or lower voltage level. There are a plurality of transistor switches within each driver which selectively couple a capacitor to the output terminal when it is driven high and at the same time couple another capacitor to one of the buses, and vice versa when the output terminal is driven low.