Patents by Inventor Steffen Marschmeyer

Steffen Marschmeyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10832953
    Abstract: Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 10, 2020
    Assignee: IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK
    Inventors: Matthias Wietstruck, Mehmet Kaynak, Philip Kulse, Marco Lisker, Steffen Marschmeyer, Dirk Wolansky
  • Publication number: 20180286751
    Abstract: Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.
    Type: Application
    Filed: September 28, 2017
    Publication date: October 4, 2018
    Inventors: Matthias Wietstruck, Mehmet Kaynak, Philip Kulse, Marco Lisker, Steffen Marschmeyer, Dirk Wolansky
  • Patent number: 9508824
    Abstract: A method of producing a semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, the portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connect
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: November 29, 2016
    Assignee: IHP GmbH—Innovations for High Perforamce Microelectronics/Leibniz-Institut fur Innovative Mikroelektronik
    Inventors: Alexander Fox, Bernd Heinemann, Steffen Marschmeyer
  • Publication number: 20150140771
    Abstract: A method of producing a semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, the portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connect
    Type: Application
    Filed: December 1, 2014
    Publication date: May 21, 2015
    Inventors: Alexander FOX, Bernd HEINEMANN, Steffen Marschmeyer
  • Patent number: 8933537
    Abstract: A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein t
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: January 13, 2015
    Assignee: IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroelekronik
    Inventors: Alexander Fox, Bernd Heinemann, Steffen Marschmeyer
  • Publication number: 20120001192
    Abstract: A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein t
    Type: Application
    Filed: December 3, 2009
    Publication date: January 5, 2012
    Inventors: Alexander Fox, Bernd Heinemann, Steffen Marschmeyer
  • Patent number: 7880270
    Abstract: A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterall
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: February 1, 2011
    Assignee: IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur innovative Mikroelektronik
    Inventors: Bernd Heinemann, Holger Rücker, Jürgen Drews, Steffen Marschmeyer