Abstract: An electrical connection encapsulation device for electrically connecting a flexible flat cable to discrete electrical wires. The device includes a flexible flat cable with a dielectric, planar, flexible carrier and at least one electrically conductive line attached to at least one surface, first and second flat, soft and pliable material layers attached to the first surface and the second surface of the flexible carrier, respectively, by adhesive bonds, at least one electrical connector member that is electrically connectable to a discrete electrical wire at one end and to the at least one electrically conductive line with the other end. The first and second layers are arranged to at least partially overlap the at least one electrically conductive line in the connecting end region in the perpendicular direction, and to extend beyond the end of the at least one electrical connector member that is facing away from the connecting end region.

Abstract: A method for producing a foil-based pressure sensor includes the steps of: providing a bottom element with a bottom foil and at least one bottom electrode disposed on the bottom foil; providing a plurality of top elements, each top element having a top foil with at least one top electrode disposed under the top foil, a combined area of the top elements being smaller than an area of the bottom element; and individually positioning and at least indirectly connecting the top elements to the bottom element so that at least one top electrode of each top element is disposed over at least one bottom electrode of the bottom element to form a sensor cell that is adapted to be activated when a pressure on the sensor cell exceeds a turn-on point. The turn-on point is adjusted by selecting a position of a top element from a plurality of positions.

Abstract: The present disclosure is directed toward a thin film photovoltaic cell including a support substrate; a contact layer disposed adjacent a first side of the substrate; a p-type semiconductor layer disposed on the first side of the substrate; an n-type semiconductor layer disposed on the first side of the substrate; and a protective back side layer structure disposed adjacent a second side of the substrate, wherein the protective back side layer structure may include a corrosion resistant material. In some embodiments, the back side layer includes at least a first layer and a second layer. Additionally and/or alternatively, the back side layer may include a molybdenum alloy, wherein the molybdenum alloy may include an alloy partner selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Al, and Si.