Abstract: A method for producing a via in a III-V multijunction solar cell that comprises a substrate arranged on an underside. The substrate has an upper side and an epitaxial layer system with multiple III-V layers on the upper side, and the epitaxial layer system comprises at least one first III-V solar cell. An organic layer is arranged on the upper side of the first III-V solar cell, and an opening having a width X and a base surface formed in the epitaxial layer system is generated in a first method step with a laser. An opening having a width Y and having a base surface is generated in a second method step, width Y being smaller than width X, and an opening having a width Z is generated in a third method step, the opening not having a base surface, and width Z being smaller than width Y.

Abstract: A method for producing a trench-shaped structure in a III-V multi-junction solar cell with an upper side and an underside. The III-V multi-junction solar cell includes a substrate arranged on the underside, and the substrate has an epilayer system on a front side. The epilayer system has at least one first III-V solar cell formed on the upper side, an organic layer is arranged on the first solar cell, and in a first processing step a first trench with a width X is created via a laser. In a second processing step a second trench with a width Y and with a bottom surface formed in the substrate is created via the laser, wherein the width Y is smaller than the width X, so that a first step is formed with the execution of the second processing step.

Abstract: A method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer, and the semiconductor wafer is designed as a substrate and has an upper side, a buffer layer and the semiconductor layer being formed on the upper side, and a carrier layer being formed above the semiconductor layer, and the sacrificial layer having a higher wet chemical etching rate compared to the semiconductor layer, the semiconductor layer being introduced into a receiving device in a process step, and position data of points arranged on the upper side being read out from a memory device in a process step, and a laser approaching the points based on the position data in a process step, and holes having a base being produced through the carrier layer and the layer formed beneath the carrier layer via the laser, the base of the hole being formed within the buffer layer.

Abstract: A disc brake for a utility vehicle includes brake caliper which straddles a brake disc, two brake pads each arranged in a pad channel of a vehicle-side brake carrier. The brake pads are retained in the disk brake under prestress by a pad retaining spring and a pad retaining clip on the brake caliper which spans a opening of the brake caliper. The disc brake further includes a restoring device configured to bias the brake pads away from one another after having been displaced during brake actuation. The restoring device includes sprung spreader elements that engage the opposite brake pads. The sprung spreader elements preferably include V-shaped spreader elements which are supported in the connection region of their respective spring arms on the pad retaining clip, and retained via their ends on the opposing brake pads.

Abstract: A dicing method for separating a wafer comprising a plurality of solar cells stack along at least one parting line, at least having the steps of: providing the wafer with a top, a bottom, an adhesive layer which is integrally bonded with the top and a cover glass layer which is integrally bonded with the adhesive layer, wherein the wafer includes a plurality of solar cell stacks, each having a germanium substrate layer forming the bottom of the wafer, a germanium sub-cell and at least two III-V sub-cells; creating a separating trench along the parting line by means of laser ablation, which extends from a bottom of the wafer through the wafer and the adhesive layer at least up to a top of the cover glass layer; and dividing the cover glass layer along the separating trench.

Abstract: A marking method for applying a unique identification to each individual solar cell stack of a semiconductor wafer, at least comprising the steps: Providing a semiconductor wafer having an upper side and an underside, which comprises a Ge substrate forming the underside; and generating an identification with a unique topography by means of laser ablation, using a first laser, on a surface area of the underside of each solar cell stack of the semiconductor wafer, the surface area being formed in each case by the Ge substrate or by an insulating layer covering the Ge substrate.

Abstract: A marking method for applying a unique identification to each individual solar cell stack of a semiconductor wafer, at least comprising the steps: Providing a semiconductor wafer having an upper side and an underside, which comprises a Ge substrate forming the underside; and generating an identification with a unique topography by means of laser ablation, using a first laser, on a surface area of the underside of each solar cell stack of the semiconductor wafer, the surface area being formed in each case by the Ge substrate or by an insulating layer covering the Ge substrate.

Abstract: A dicing method for separating a wafer comprising a plurality of solar cells stack along at least one parting line, at least having the steps of: providing the wafer with a top, a bottom, an adhesive layer which is integrally bonded with the top and a cover glass layer which is integrally bonded with the adhesive layer, wherein the wafer includes a plurality of solar cell stacks, each having a germanium substrate layer forming the bottom of the wafer, a germanium sub-cell and at least two III-V sub-cells; creating a separating trench along the parting line by means of laser ablation, which extends from a bottom of the wafer through the wafer and the adhesive layer at least up to a top of the cover glass layer; and dividing the cover glass layer along the separating trench.