Abstract: A method for measuring photomasks for semiconductor lithography, includes the following steps: loading a photomask into a recording unit of a measuring apparatus, recording images of individual measurement regions on the photomask by means of an image capturing unit, comparing at least one recorded image of a measurement region with a simulated image of this measurement region using specific simulation parameters. In the process, the comparison of at least one of the recorded images with the corresponding simulated image is used to carry out an adjustment of at least one portion of the simulation parameters.

Abstract: The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: recording an aerial image of at least one region of the photomask, defining at least one region of interest, ascertaining structure edges in at least one region of interest, providing desired structures to be produced by the photomask, adapting the ascertained structure edges to the desired structures, and displacing the adapted structure edges by means of the results of a separate registration measurement.

Abstract: The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: recording an aerial image of at least one region of the photomask, defining at least one region of interest, ascertaining structure edges in at least one region of interest, providing desired structures to be produced by the photomask, adapting the ascertained structure edges to the desired structures, and displacing the adapted structure edges by means of the results of a separate registration measurement.

Abstract: The invention relates to a method and an apparatus for determining a position of at least one structure element of a photolithographic mask, wherein the method comprises the following steps: (a) providing a reference image of the at least one structure element; (b) deriving a data record for the reference image, said data record comprising metadata relating to the reference image; (c) providing at least one measured image of the at least one structure element of the photolithographic mask; and (d) optimizing the reference image by use of the derived data record and correlating the at least one measured image and the optimized reference image.

Abstract: The invention relates to a method and an apparatus for determining a position of at least one structure element of a photolithographic mask, wherein the method comprises the following steps: (a) providing a reference image of the at least one structure element; (b) deriving a data record for the reference image, said data record comprising metadata relating to the reference image; (c) providing at least one measured image of the at least one structure element of the photolithographic mask; and (d) optimizing the reference image by use of the derived data record and correlating the at least one measured image and the optimized reference image.

Abstract: There is presently provided a probe comprising an isolated sphingolipid binding domain (SBD) polypeptide, wherein the isolated SBD polypeptide is capable of binding to a sphingolipid, and methods and uses relating to such a probe.

Abstract: There is presently provided a probe comprising an isolated sphingolipid binding domain (SBD) polypeptide, wherein the isolated SBD polypeptide is capable of binding to a sphingolipid, and methods and uses relating to such a probe.