Abstract: The present invention relates to an organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first emission layer, and a hole injection layer, wherein the hole injection layer comprises a metal complex of formula (I) and a compound of formula (II), wherein the hole injection layer is arranged between the anode layer and the at least one first emission layer.

Abstract: The present invention relates to an organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first emission layer, and a hole injection layer, wherein the hole injection layer comprises a metal complex, wherein the metal complex has the formula (I): Formula (I).

Abstract: The present invention relates to organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first emission layer, and a hole injection layer, wherein the hole injection layer comprises a metal complex, wherein the metal complex comprises a metal ion M selected from Ce(IV), Hf(IV) or Zr(IV) as well as a metal complex.

Abstract: The present invention relates to a metal complex, a semiconductor layer comprising the metal complex and an organic electronic device comprising at least one metal complex thereof.

Abstract: The present invention relates to a compound represented by Formula (I) wherein M is Cu, Zn, Al, Hf; or Formula (V).

Abstract: The present invention relates to active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, wherein—at least a first OLED pixel and a second OLED pixel comprising—an anode layer, —a common cathode layer, —at least one emission layer, which is optional a common emission layer, at least a stack of organic layers, wherein the stack of organic layers is arranged between the anode layer and cathode layer.

Abstract: The present invention is directed to benzo diphenyl fluorene compound, represented by formula (I).

Abstract: The present invention relates to an organic electroluminescent device comprising a substrate, an anode layer and a cathode layer, at least one light emitting layer, and at least one semiconductor layer or more, wherein the at least one semiconductor layer comprises at least one metalorganic compound, comprising a metal M and at least one ligand L, wherein the ligand L is preferably 4-(2,4-dioxopentan-3-yl)-2,6-bis(trifluoromethyl)benzonitrile (I) and the metalorganic compound is preferably bis(trifluoromethyl) phenyl)-4-oxopent-2-en-2-yl)oxy)copper(II) (G1) or the corresponding aluminium(III) and iron(III) complexes. Technical data of organic electroluminescent devices comprising said metalorganic compounds is provided in table 3.

Abstract: The present invention relates to a method for preparation of a p-type semiconducting layer, a p-type semiconducting layer obtained by said method, an organic electronic device comprising the p-type semiconducting layer, a display device comprising the organic electronic device, a metal compound and a use of said metal compound for the p-type semiconducting layer.

Abstract: The present invention relates to an active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, wherein—at least a first OLED pixel and a second OLED pixel comprising—an anode layer, —a common cathode layer, —at least a stack of organic layers, comprising a plurality of semiconductor layers.

Abstract: The present invention relates to compound represented by Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C2 to C24 heteroaryl group, wherein at least one substituent is selected from halogen, F, Cl, CN, partially or fully fluorinated C1 to C6 alkyl, partially or fully fluorinated C1 to C6 alkoxy. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pentane-2,4-dione, such as e.g.

Abstract: The present invention relates to a compound of Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C6 to C24 aryl group, wherein at least one substituent of the substituted C6 to C24 aryl group is selected from CN or partially or fully fluorinated C1 to C12 alkyl. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 4-(2,4-dioxopent-3-yl)-2,3,5,6-tetrafluorobenzonitrile, such as e.g. Fe, Al and Cu complexes thereof.

Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).

Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).

Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).

Abstract: The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

Abstract: Herein is reported a method for producing a bispecific antibody comprising a first antigen-binding site that specifically binds to a first antigen and a second antigen-binding site that specifically binds to a second antigen comprising the following steps a) cultivating a cell comprising a nucleic acid encoding the bispecific antibody, b) recovering the bispecific antibody from the cell or the cultivation medium, c) contacting the bispecific antibody with an affinity chromatography material, d) washing the affinity chromatography material with a low conductivity aqueous solution, wherein the low conductivity aqueous solution has a conductivity value of about 0.5 mS/cm or less, e) recovering the bispecific antibody from the affinity chromatography material, f) performing a further chromatography step and thereby producing the bispecific antibody.

Abstract: Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10?2 Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100° C. and 600° C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

Abstract: The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

Abstract: The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.