Patents by Inventor Stella Q. Hong

Stella Q. Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a semiconductor device having a heteroepitaxial layer
    Patent number: 5891769
    Abstract: A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strained semiconductor layer is relaxed using thermal stress.
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: April 6, 1999
    Assignee: Motorola, Inc.
    Inventors: Hang Ming Liaw, Curtis Lee Burt, Stella Q. Hong, Clifford P. Stein
  • Method for fabricating a semiconductor device using lateral gettering
    Patent number: 5753560
    Abstract: A semiconductor structure (20) includes a silicon layer (16) formed on an oxide layer (14). Gettering sinks (31, 32) are formed in the silicon layer (16). Lateral gettering is performed to effectively remove impurities from a first section (26) of the semiconductor layer (16). An insulated gate semiconductor device (40) is then formed in semiconductor layer (16), wherein a channel region (55) of the device (40) is formed in the first section (26) of the semiconductor layer (16). A gate dielectric layer (42) of the device (40) is formed over a portion of the first section (26) after the lateral gettering process, thereby enhancing the integrity of the gate dielectric layer (42).
    Type: Grant
    Filed: October 31, 1996
    Date of Patent: May 19, 1998
    Assignee: Motorola, Inc.
    Inventors: Stella Q. Hong, Thomas A. Wetteroth, Syd Robert Wilson