Abstract: A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.

Abstract: A laser light source includes a thermoelectric cooling device, a composite green laser made up of an infrared wavelength pumped laser diode and a solid-state laser cavity designed for efficient nonlinear intra-cavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals thermally coupled with the cooling device and a red wavelength laser diode thermally coupled with said cooling device. In this manner, the cooling device maintains a common temperature of the infrared pumped laser diode and the red laser diode over an ambient temperature range.

Abstract: A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. Also described design of the continuously operated laser with an electro-optic element for modulation of the intensity of the laser output at frequencies up to hundred of megahertz. Such modulation is desired for various applications, including compact projectors with high resolution.

Abstract: A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.

Abstract: A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. Also described design of the continuously operated laser with an electro-optic element for modulation of the intensity of the laser output at frequencies up to hundred of megahertz. Such modulation is desired for various applications, including compact projectors with high resolution.

Abstract: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.

Abstract: A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources.

Abstract: A compact solid-state laser array for nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. The crystals contain dopants such as MgO and/or have a specified stoichiometry. A preferred embodiment comprises a microchip laser cavity that includes a solid-state gain chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN, for efficient frequency doubling of a infrared laser pump beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. The use of such high-efficiency pumps and nonlinear materials allows scaling of a compact, low-cost architecture to provide high output power levels in the blue/green wavelength range.

Abstract: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.

Abstract: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.

Abstract: A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources.

Abstract: A process for reducing the poling field of congruent LiNbO3 and LiTaO3 crystal-based nonlinear optical devices and for the production of domain structures with precise reproducibility of the main parameters by depositing a thin layer of a stoichiometric LiNbO3 film on the Z-face of a congruent LiNbO3 or LiTaO3 wafer. A new domain nucleation, evolution and stabilization process is provided to afford a uniform, short period domain superstructure for the conversion of near infra-red light to near ultraviolet, blue and green light.

Abstract: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.

Abstract: A compact solid-state laser array for nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. The crystals contain dopants such as MgO and/or have a specified stoichiometry. A preferred embodiment comprises a microchip laser cavity that includes a solid-state gain chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN, for efficient frequency doubling of a infrared laser pump beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. The use of such high-efficiency pumps and nonlinear materials allows scaling of a compact, low-cost architecture to provide high output power levels in the blue/green wavelength range.

Abstract: Isolation of a heterojunction bipolar transistor device in an integrated circuit is accomplished by forming the device within a trench in dielectric material overlying single crystal silicon. Precise control over the thickness of the initially-formed dielectric material ultimately determines the depth of the trench and hence the degree of isolation provided by the surrounding dielectric material. The shape and facility of etching of the trench may be determined through the use of etch-stop layers and unmasked photoresist regions of differing widths. Once the trench in the dielectric material is formed, the trench is filled with selectively and/or nonselectively grown epitaxial silicon. The process avoids complex and defect-prone deep trench masking, deep trench silicon etching, deep trench liner formation, and dielectric reflow steps associated with conventional processes.

Abstract: A silicon-germanium alloy of high crystal quality and containing uniform concentrations of dopant and germanium is formed by applying laser energy to a doped amorphous/polysilicon germanium layer overlying epitaxial silicon. Energy transferred from the laser beam causes melting of the germanium and the underlying silicon, resulting in diffusion of germanium and dopant into the melted silicon. Subsequent cooling and crystallization of the silicon/germanium/dopant melt produces a high quality crystal lattice uniformly incorporating germanium and dopant within its structure. Efficient energy transfer from the laser beam to the underlying germanium and silicon may be promoted by patterning an anti-reflective coating over the amorphous/polysilicon doped germanium prior to exposure to laser radiation. The process is particularly suited for forming the silicon-germanium base of a heterojunction bipolar transistor device.

Abstract: Isolation of a heterojunction bipolar transistor device in an integrated circuit is accomplished by forming the device within a trench in dielectric material overlying single crystal silicon. Precise control over the thickness of the initially-formed dielectric material ultimately determines the depth of the trench and hence the degree of isolation provided by the surrounding dielectric material. The shape and facility of etching of the trench may be determined through the use of etch-stop layers and unmasked photoresist regions of differing widths. Once the trench in the dielectric material is formed, the trench is filled with selectively and/or nonselectively grown epitaxial silicon. The process avoids complex and defect-prone deep trench masking, deep trench silicon etching, deep trench liner formation, and dielectric reflow steps associated with conventional processes.

Abstract: Electro-optical waveguide switching method and apparatus includes structure and steps for switching an optical signal from a first waveguide into a second waveguide. Voltage application structure and/or step is provided to apply a differential voltage to the first waveguide to cause an optical signal propagating in the first waveguide to propagate in the second waveguide. The first waveguide core/cladding structure is configured to provide a memory function that substantially maintains the propagation of the optical signal from the first waveguide to the second waveguide after the differential voltage is no longer applied to the first waveguide. Preferably, the switch is a planar array switch having epitaxially-deposited PZT core and PZLT cladding layers. The design makes possible 1000×1000 waveguide array switching on a single substrate.

Abstract: A telecommunication switching array uses optical-electrical display addressing to eliminate the need for control lines by using only external controls to indicate the active nodes of the array. The external controls are integrated in a flat panel display, and the easily addressed display is coupled optically to the switching array through integrated photodconductors located adjacent to the switches. There is one photoconductor for each switch. This results in a separation of control functions and switching functions which is embodied in a separate control plate and a separate switching plate. A third intermediate plate may be included for optical isolation and optional optical magnification. The array may be scaled for high-dimensional systems (e.g., an N×N array where N is 1,000 or more).

Abstract: Extremely high dopant concentrations are uniformly introduced into a semiconductor material by laser annealing aided by an anti-reflective coating (ARC). A spin-on-glass (SOG) film containing dopant is formed on top of the semiconductor material. An ARC is then formed over the doped SOG layer. Application of radiation from an excimer laser to the ARC heats and melts the doped SOG film and the underlying semiconductor material. During this melting process, dopant from the SOG film diffuses uniformly within the semiconductor material. Upon removal of the laser radiation, the semiconductor material cools and crystallizes, evenly incorporating the diffused dopant within its lattice structure. The ARC suppresses reflection of the laser by the doped material, promoting efficient transfer of energy from the laser to heat and melt the underlying doped layer and semiconductor material.