Abstract: A method of controlling deposition rate of a film deposition in a vacuum multi-plasma-jet system utilizing plasma-chemical reactions in an active discharge zone, wherein the system comprises at least one series of plasma nozzles, the working tubes of which are terminated by a hollow cathode whose mouth is located in the vicinity of the top area of the holding system with the stored substrate, wherein the principle of the solution consists in the deposition of the thin film on the substrate after the individual ignition of the discharges in each plasma nozzle and in the control of their parameters by means of external sources of voltage, the temperature of each hollow cathode is monitored by means of contactless temperature measurement and based on the evaluation of the measured temperature values, the settings of the discharge parameters is provided, with help of an control unit, in particular it is regulated the effective current in each of the plasma nozzles so that the deposition rates of all the hollow ca