Abstract: A device (10) for determining a parameter of a fluid flow includes an elastically deformable boom (23, 28, 33, 42, 47), with an inflow area (29, 31, 32, 37, 38, 39, 40, 44, 45, 46, 49, 50) for fluid and a measurement apparatus (16) measuring deformation of the boom. A section of the inflow area is aligned askew and/or curved to a main fluid inflow direction (25). The boom has an inflow structure (24, 30, 34, 43, 48) on one free end. The inflow structure has the fluid inflow area. To determine the parameter of the fluid flow at high resolution, in particular a high angle resolution, the boom has a reflection surface (27) on a side facing away from the inflow structure and the measurement apparatus (16) has a laser (17). A beam axis (26) of the laser (17) is directed to the reflection surface (27) of the boom.

Abstract: A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.1).

Abstract: A device (10) for determining a parameter of a fluid flow includes an elastically deformable boom (23, 28, 33, 42, 47), with an inflow area (29, 31, 32, 37, 38, 39, 40, 44, 45, 46, 49, 50) for fluid and a measurement apparatus (16) measuring deformation of the boom. A section of the inflow area is aligned askew and/or curved to a main fluid inflow direction (25). The boom has an inflow structure (24, 30, 34, 43, 48) on one free end. The inflow structure has the fluid inflow area. To determine the parameter of the fluid flow at high resolution, in particular a high angle resolution, the boom has a reflection surface (27) on a side facing away from the inflow structure and the measurement apparatus (16) has a laser (17). A beam axis (26) of the laser (17) is directed to the reflection surface (27) of the boom.

Abstract: A method for depositing a piezoelectric film may be provided containing AIN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AIN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.