Abstract: A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.

Abstract: In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them.

Abstract: A heterojunction semiconductor device (200) comprising a substrate (202) and a multilayer structure disposed on the substrate. The multilayer structure comprising a first layer (204), which comprises a first semiconductor disposed on top of the substrate, and a second layer (206), which comprises a second semiconductor disposed on top of the first layer to define an interface between the first layer and the second layer. The second semiconductor is different from the first semiconductor such that a Two-Dimensional Electron Gas (220) forms adjacent to the interface. The multilayer structure also comprising a passivation layer, which comprises a semiconductor passivation layer (208) disposed on top of the second layer. The heterojunction semiconductor device also includes a first terminal (210) electrically coupled to a first area of the heterojunction semiconductor device; and a second terminal (212) electrically coupled to a second area of the heterojunction semiconductor device.

Abstract: A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.

Abstract: In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them.

Abstract: A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.

Abstract: A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.

Abstract: A heterojunction semiconductor device (200) comprising a substrate (202) and a multilayer structure disposed on the substrate. The multilayer structure comprising a first layer (204), which comprises a first semiconductor disposed on top of the substrate, and a second layer (206), which comprises a second semiconductor disposed on top of the first layer to define an interface between the first layer and the second layer. The second semiconductor is different from the first semiconductor such that a Two-Dimensional Electron Gas (220) forms adjacent to the interface. The multilayer structure also comprising a passivation layer, which comprises a semiconductor passivation layer (208) disposed on top of the second layer. The heterojunction semiconductor device also includes a first terminal (210) electrically coupled to a first area of the heterojunction semiconductor device; and a second terminal (212) electrically coupled to a second area of the heterojunction semiconductor device.