Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes.

Abstract: The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer.

Abstract: A light sensing cell comprising output circuitry for generating an output voltage depending on the voltage of a sensing node, the voltage of the sensing node varying as a function of a received light; a reset transistor operable to force the voltage of the sensing node to a reset voltage; a feedback loop including an operational amplifier operable to add through a capacitive voltage divider a correction voltage to the voltage of the sensing node, said correction voltage depending on the output voltage; and preset mean circuitry for, during the operation of the reset transistor and until the amplifier is operated, setting the input of the capacitive voltage divider to a predetermined voltage.

Abstract: The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer.

Abstract: A light sensing cell comprising output means (T1, T2) for generating an output voltage depending on the voltage of a sensing node (2), the voltage of the sensing node varying as a function of a received light; a reset transistor (T3) operable to force the voltage of the sensing node (2) to a reset voltage; a feedback loop comprising an operational amplifier (A1) operable to add through a capacitive voltage divider (C3, C4) a correction voltage to the voltage of the sensing node (2), said correction voltage depending on the output voltage; and preset means (T5) for, during the operation of the reset transistor (T3) and until the amplifier (A1) is operated, setting the input of the capacitive voltage divider (C3, C4) to a predetermined voltage (Vinit).

Abstract: The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer.

Abstract: The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer.