Abstract: An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode.