Abstract: Technologies are provided for measuring a programming current (PC) for a memory cell (MC) of a one-time programmable read-only memory array. The MC includes a fuse equivalent circuit (FEC) that includes a first current path (CP) having a first node, a second CP having a fuse of the memory cell and a second node, and a third CP. The PC is split into a first current, a second current and a third current that flow over the first CP, the second CP, and the third CP, respectively. A first voltage applied along the first path is divided to generate a second voltage at the first node, and an output voltage generated by an operational amplifier controls the second current to maintain a third voltage at the second node at substantially the same value as the second voltage so that the second current has a sufficiently low value and does not burn the fuse.

Abstract: Technologies are provided for measuring a programming current (PC) for a memory cell (MC) of a one-time programmable read-only memory array. The MC includes a fuse equivalent circuit (FEC) that includes a first current path (CP) having a first node, a second CP having a fuse of the memory cell and a second node, and a third CP. The PC is split into a first current, a second current and a third current that flow over the first CP, the second CP, and the third CP, respectively. A first voltage applied along the first path is divided to generate a second voltage at the first node, and an output voltage generated by an operational amplifier controls the second current to maintain a third voltage at the second node at substantially the same value as the second voltage so that the second current has a sufficiently low value and does not burn the fuse.