Abstract: A method and apparatus for measuring the rate of flow of an ion-containing fluid in a channel are disclosed herein. The apparatus includes a captive sensor operable to detect changes in capacitance value due to the deflection of the ions in the fluid by a magnetic field, and a processor operable to determine a flow speed of fluid from the detected change in capacitance value and a predetermined value of magnetic field strength. Such apparatus may be implemented using CMOS technology. The apparatus may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectriclayer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.

Abstract: Flow sensors for measuring the flow of an ion-containing fluid may be implemented using mechanical or electrical techniques. Mechanical flow sensors are have moving parts and therefore may be unreliable after some time and are expensive to manufacture. Hall-effect type flow sensors typically require a reversible magnetic field to compensate for electrochemical effects. A flow meter including such a sensor uses an electromagnet. A flow sensor (100) is described using a capacitive sensor (10) and processor (12) to determine the flow rate from a change in capacitance and a magnetic field. Such a flow sensor may be implemented using CMOS technology. The flow sensor may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A GaN hetereojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectric layer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.