Patents by Inventor Stephan Jo Cecil Henri Theeuwen

Stephan Jo Cecil Henri Theeuwen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor and method of manufacturing a MOS transistor
    Patent number: 7576387
    Abstract: The MOS transistor (1) of the invention comprises a gate electrode (10), a channel region (4), a drain contact region (6) and a drain extension region (7) mutually connecting the channel region (4) and the drain contact region (6). The MOS transistor (1) further comprises a shield layer (11) which extends over the drain extension region (7) wherein the distance between the shield layer (11) and the drain extension region (7) increases in a direction from the gate electrode (10) towards the drain contact region (6). In this way the lateral breakdown voltage of the MOS transistor (1) is increased to a level at which the MOS transistor (1) may fulfill the ruggedness requirement for broadcast applications for a supply voltage higher than that used in base station applications.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: August 18, 2009
    Assignee: NXP B.V.
    Inventors: Stephan Jo Cecil Henri Theeuwen, Johannes Adrianus Maria De Boet, Jos Gerjan Eusebius Klappe