Patents by Inventor Stephan Krugel

Stephan Krugel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a thin oxide layer having improved reliability on a semiconductor surface
    Patent number: 6900111
    Abstract: A method for forming a reliable and ultra-thin oxide layer, such as a gate oxide layer of an MOS transistor, comprises an annealing step immediately performed prior to oxidizing a substrate. The annealing step is performed in an inert gas ambient to avoid oxidation of the semiconductor surface prior to achieving a required low oxidizing temperature. Preferably, the annealing step and the oxidizing step are carried out as an in situ process, thereby minimizing the thermal budget of the overall process.
    Type: Grant
    Filed: April 19, 2002
    Date of Patent: May 31, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Karsten Wieczorek, Stephan Krügel, Falk Graetsch
  • Method of forming a thin oxide layer having improved reliability on a semiconductor surface
    Publication number: 20030008524
    Abstract: A method for forming a reliable and ultra-thin oxide layer, such as a gate oxide layer of an MOS transistor, comprises an annealing step immediately performed prior to oxidizing a substrate. The annealing step is performed in an inert gas ambient to avoid oxidation of the semiconductor surface prior to achieving a required low oxidizing temperature. Preferably, the annealing step and the oxidizing step are carried out as an in situ process, thereby minimizing the thermal budget of the overall process.
    Type: Application
    Filed: April 19, 2002
    Publication date: January 9, 2003
    Inventors: Karsten Wieczorek, Stephan Krugel, Falk Graetsch