Abstract: A method and a device for controlling a fuel injection system for an internal combustion engine of a motor vehicle, whereby the internal combustion engine has a common rail, a high-pressure pump, a flow control valve for controlling the fuel delivery rate of the high-pressure pump into the common rail and a control unit for triggering the flow control valve. The method comprises the steps of determining the prevailing fuel demand in the common rail as a function of the prevailing driving state of the vehicle and controlling the pulse duty factor and frequency of the triggering of the flow control valve as a function of the prevailing fuel demand determined in the common rail.

Abstract: The present invention relates to a process for the treatment or prevention of indications which are selected from among the group comprising headaches, migraine and cluster headaches, this process comprising the joint administration of a therapeutically effective amount of a selected CGRP antagonist (A), a physiologically acceptable salt thereof or a hydrate of the salt and a therapeutically effective amount of a second or third active anti-migraine medicament (B), particularly sumatriptan, zolmitriptan or dihydroergotamine or a physiologically acceptable salt thereof, and to the corresponding pharmaceutical compositions and the preparation thereof.

Abstract: A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.

Abstract: In a method for cooling an internal combustion engine, in particular in/on a motor vehicle, it is possible for individual components of the internal combustion engine to be cooled individually, for example a cylinder head and/or a cylinder block, by what is known as a split cooling system. In order to improve the cooling of the components, it is proposed to control the cooling of at least one of the components adaptively.

Abstract: The present invention relates to the CGRP antagonists of general formula wherein A and R1 to R3 are defined as in claim 1, the tautomers, the diastereomers, the enantiomers, the hydrates thereof, the mixtures thereof and the salts thereof and the hydrates of the salts, particularly the physiologically acceptable salts thereof with inorganic or organic acids, pharmaceutical compositions containing these compounds, the use thereof and processes for the preparation thereof.

Abstract: The invention relates to a method of treatment or prevention of hot flushes in men who underwent castration, e.g. due to androgen ablation treatment in prostate cancer therapy, comprising administration of an effective amount of a selected CGRP antagonist to the patient, and to the use of said active compounds for the manufacture of a pharmaceutical composition intended to be used in this method.

Abstract: A method of producing a high quality bulk single crystal of silicon carbide in a seeded growth system is disclosed. The method includes positioning the seed crystal in a crucible while exerting minimal torsional forces on the seed crystal to thereby prevent torsional forces from warping or bowing the seed crystal in a manner that that would otherwise encourage sublimation from the rear of the seed crystal or undesired thermal differences across the seed crystal.

Abstract: CGRP antagonists of the formula of which the following are exemplary: (1) 4-(2-oxo-1,2,4,5-tetrahydro-1,3-benzodiazepin-3-yl)-piperidine-1-carboxylic acid-{(R)-1-(3,4-diethyl-benzyl)-2-[4-(1-methyl-piperidin-4-yl)-piperazin-1-yl]-2-oxo-ethyl}-amide, (2) 4-(2-oxo-1,2,4,5-tetrahydro-1,3-benzodiazepin-3-yl)-piperidine-1-carboxylic acid-{(R)-1-(3,4-diethyl-benzyl)-2-[4-(4-methyl-piperazin-1-yl)-piperidin-1-yl]-2-oxo-ethyl}-amide.

Abstract: The present invention relates to the CGRP antagonists of general formula wherein A, X and R1 to R3 are defined as in claim 1, the tautomers, the diastereomers, the enantiomers, the hydrates thereof, the mixtures thereof and the salts thereof and the hydrates of the salts, particularly the physiologically acceptable salts thereof with inorganic or organic acids, pharmaceutical compositions containing these compounds, the use thereof and processes for the preparation thereof.

Abstract: A method and a device for controlling a fuel injection system for an internal combustion engine of a motor vehicle, whereby the internal combustion engine has a common rail, a high-pressure pump, a flow control valve for controlling the fuel delivery rate of the high-pressure pump into the common rail and a control unit for triggering the flow control valve. The method comprises the steps of determining the prevailing fuel demand in the common rail as a function of the prevailing driving state of the vehicle and controlling the pulse duty factor and frequency of the triggering of the flow control valve as a function of the prevailing fuel demand determined in the common rail.

Abstract: A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.

Abstract: A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.

Abstract: The present invention relates to (hetero)aryl compounds of general formula I wherein the groups and radicals A, B, Q, W, X, Y, Z, R1, R2, R4a, R4b, R5a, R5b, have the meanings given in claim 1. Moreover the invention relates to pharmaceutical compositions containing at least one compound according to the invention. By virtue of their MCH-receptor antagonistic activity the pharmaceutical compositions according to the invention are suitable for the treatment of metabolic disorders and/or eating disorders, particularly obesity, bulimia, anorexia, hyperphagia and diabetes.

Abstract: The present invention relates to the CGRP antagonists of general formula I wherein R1, R2, R3 and R4 are defined as in claim 1, the tautomers, the isomers, the diastereomers, the enantiomers, the hydrates thereof, the mixtures thereof and the salts thereof and the hydrates of the salts thereof, particularly the physiologically acceptable salts thereof with inorganic or organic acids or bases, as well as those compounds of general formula I wherein one or more hydrogen atoms are replaced by deuterium, pharmaceutical compositions containing these compounds, their use and processes for preparing them.

Abstract: The present invention relates to the CGRP-antagonists of general formula I wherein R1, R2, R3 and R4 are defined as in claim 1, the tautomers, the isomers, the diastereomers, the enantiomers, the hydrates thereof, the mixtures thereof and the salts thereof and the hydrates of the salts thereof, particularly the physiologically acceptable salts thereof with inorganic or organic acids or bases, as well as those compounds of general formula I wherein one or more hydrogen atoms are replaced by deuterium, pharmaceutical compositions containing these compounds, their use and processes for preparing them.

Abstract: A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for creating a major thermal gradient in the crucible that defines a major growth direction between the source composition and the seed crystal for encouraging vapor transport between the source composition and the seed crystal, and the seed crystal being positioned on the seed holder with the macroscopic growth surface of the seed crystal forming an angle of between about 70° and 89.5° degrees relative to the major thermal gradient and the major growth direction and with the crystallographic orientation of the seed crystal having the c-axis of the crystal forming an angle with the major thermal gradient of between about 0° and 2°.

Abstract: The present invention relates to the CGRP antagonists of general formula I wherein R1, R2, R3 and R4 are as defined in claim 1, the tautomers, the isomers, the diastereomers, the enantiomers, the hydrates thereof, the mixtures thereof and the salts thereof and the hydrates of the salts thereof, particularly the physiologically acceptable salts thereof with inorganic or organic acids or bases, as well as those compounds of general formula I wherein one or more hydrogen atoms are replaced by deuterium, pharmaceutical compositions containing these compounds, their use and processes for preparing them.

Abstract: The invention relates to a valve, especially a gas safety valve, comprising a fluid-guiding path (32) that can be sealed by means of a sealing device (30) which is provided with a sealing surface (34) that can be brought against an abutment surface (36) of an abutment part (38) and is at least partially inserted into a receiving region (40) of a receiving part (42). As the sealing device (30) is fixed inside the receiving region (40) in such a way that a counter-holding part (54) can be brought into contact with the sealing device (30) by connection to the receiving part (42), the sealing device is arranged inside the receiving region of the receiving part and is securely held therein in the position thereof.

Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.

Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.