Abstract: A topographical structure includes a carrier layer (TS); at least one metal layer (M) applied on the carrier layer; a marginal topology edge at the metal layer; and a structured cover (AB) at the topology edge.

Abstract: A temperature-compensated BAW resonator is disclosed. In an embodiment, the BAW includes a substrate and a layer stack disposed thereon, the layer stack including a bottom electrode layer, a top electrode layer, a piezoelectric layer arranged between the bottom and top electrode layers and an acoustic mirror arranged between the bottom electrode layer and the substrate, wherein the acoustic mirror comprises at least two mirror layers, wherein the acoustic mirror comprises high impedance and low impedance layers arranged in an alternating sequence. The layer stack further includes a compensation layer including a material having a positive temperature coefficient of viscoelastic properties, wherein the compensation layer is arranged between the acoustic mirror and the bottom electrode layer, wherein the mirror layers together form a Bragg mirror.

Abstract: A reactance filter includes a series branch that connects a signal input to a signal output. At least one parallel branch branches off from the series branch with respect to ground. A parallel resonator is arranged in each parallel branch. Two or more series resonators are connected in series in the series branch. A capacitor is connected in parallel with one of the series resonators in the series branch.

Abstract: A temperature-compensated BAW resonator is disclosed. In an embodiment, the BAW includes a substrate and a layer stack disposed thereon, the layer stack including a bottom electrode layer, a top electrode layer, a piezoelectric layer arranged between the bottom and top electrode layers and an acoustic mirror arranged between the bottom electrode layer and the substrate, wherein the acoustic mirror comprises at least two mirror layers, wherein the acoustic mirror comprises high impedance and low impedance layers arranged in an alternating sequence. The layer stack further includes a compensation layer including a material having a positive temperature coefficient of viscoelastic properties, wherein the compensation layer is arranged between the acoustic mirror and the bottom electrode layer, wherein the mirror layers together form a Bragg mirror.

Abstract: An encapsulated component and a method for producing an encapsulated component are specified. The component includes a carrier substrate, a functional structure, a thin-film cover and a reinforcement layer comprising glass. The carrier substrate, the thin-film cover and the reinforcement layer together enclose a cavity around at least parts of the functional structure.

Abstract: An antenna matching circuit includes at least two signal paths are connected to one antenna connection. The signal paths are designed to transmit and/or receive RF signals. A matching circuit includes a discrete line for phase shifting integrated at the antenna end in at least one of the signal paths. In this case, at least one of the capacitances contained in the discrete line is in the form of a micro-acoustic resonator, whose resonance is shifted sufficiently far that it is outside the pass band of the respective signal paths.

Abstract: A topographical structure includes a carrier layer (TS); at least one metal layer (M) applied on the carrier layer; a marginal topology edge at the metal layer; and a structured cover (AB) at the topology edge.

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: A reactance filter includes a series branch that connects a signal input to a signal output. At least one parallel branch branches off from the series branch with respect to ground. A parallel resonator is arranged in each parallel branch. Two or more series resonators are connected in series in the series branch. A capacitor is connected in parallel with one of the series resonators in the series branch.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.

Abstract: A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Abstract: A bulk acoustic wave (BAW) filter (40) is fabricated from thin film bulk acoustic wave resonators and a method eliminates unwanted side passbands. This BAW filter comprises a substrate (14) a resonator section (11) and an acoustic mirror section (12). Further it comprises a detuning component (31) positioned in the resonator section (11) to provide precise passband characteristics and an additional detuning component (41) in the acoustic mirror section (12) to suppress unwanted side-passband characteristics.

Abstract: A biochemical semiconductor chip laboratory is disclosed including a coupled address and control chip for biochemical analyses and a method for producing the same. In at least one embodiment the semiconductor chip laboratory has a semiconductor sensor chip, which provides numerous analytical positions for biochemical samples in a matrix. The sensor chip is located on the address and control chip and the analytical positions are in electric contact with a printed contact structure on the upper face of the address and control chip via low-resistance through-platings through the semiconductor substrate of the semiconductor chip.

Abstract: A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

Abstract: A method for producing a piezoelectric component comprising at least two stacked crystal filters comprises the steps of depositing of the layer stack above the bottom electrode and the subsequent patterning of the upper electrically conductive layer and, if appropriate, second piezoelectric layers. Thus, it is possible, in a simple manner, with a minimum of process steps, to produce a piezoelectric component comprising two stacked crystal filters which are directly connected to one another via their bottom and central electrodes. The piezoelectric component furthermore has the advantage that applications in which a high stop band attenuation is important can be realized with a relatively small number of filter stages. In this case, through the use of at least two stacked crystal filters, it is possible to achieve an excellent out-of-band rejection also for “single-ended signals”.

Abstract: In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.