Patents by Inventor Stephan Senz

Stephan Senz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method Of Synthesizing Semiconductor Nanostructures And Nanostructures Synthesized By The Method
    Publication number: 20100065810
    Abstract: A method of synthesizing semiconductor nanostructures of at least one semiconductor material (e.g. nanowires, nanorods, nanoribbons, nanodots, quantumdots, etc.) is described which includes the steps of placing a solid catalyst particle on a substrate, placing the combination of the said substrate and the said solid catalyst in a chamber of low oxygen partial pressure, below I×10?2 mbar, adding one or more gaseous reactants comprising at least one of said semiconductor material and a suitable precursor therefor and heating the said combination to a temperature above 200° C. but below the melting point of the solid catalyst particle. Nanostructures made by the method are also claimed.
    Type: Application
    Filed: April 5, 2007
    Publication date: March 18, 2010
    Applicant: Max-Planck-Gessellschaft zur Foerderung der Wissenschaften e.V.
    Inventors: Ulrich Goesele, Stephan Senz, Volker Schmidt, Yewu Wang
  • Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Patent number: 6663989
    Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
    Type: Grant
    Filed: March 28, 2002
    Date of Patent: December 16, 2003
    Assignee: Max-Planck-Institut fur Mikrostrukturphysik
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Patent number: 6531235
    Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: March 11, 2003
    Assignee: Max-Planck-Institute für Mikrostrukturphysik
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Publication number: 20030008179
    Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
    Type: Application
    Filed: March 28, 2002
    Publication date: January 9, 2003
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gosele
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Publication number: 20020197489
    Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.
    Type: Application
    Filed: June 6, 2001
    Publication date: December 26, 2002
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gosele