Abstract: A device and method for measuring wafers include an optical coherence tomograph and a scanning device that scans the surface of a wafer successively at a plurality of measuring points. Two measuring points have a distance dmax of 140 mm?dmax?600 mm. An evaluation unit calculates distance values and/or thickness values from the interference signals provided by the optical coherence tomograph.

Abstract: A device for measuring wafers includes an optical coherence tomograph and a scanning device that scans a surface of a wafer successively at a plurality of measuring points. The scanning device has exactly two scanning mirrors that are each mounted rotatably about exactly one axis. An evaluation unit calculates distance values and/or thickness values from the interference signals provided by the optical coherence tomograph. A collision protection device limits angles of rotation of at least one of the two scanning mirrors.

Abstract: A device for measuring wafers includes an optical coherence tomograph and a scanning device that scans the surface of the wafer successively at a plurality of measuring points. Two measuring points have a distance dmax of 140 mm?dmax?600 mm. An evaluation unit calculates distance values and/or thickness values from the interference signals provided by the optical coherence tomograph.

Abstract: A device for measuring wafers includes an optical coherence tomograph, which generates a measuring light beam and directs it onto the wafer via an optical system. A scanning device deflects the measuring light beam in two spatial directions. A control unit controls the scanning device so that the measuring light beam scans the surface of the wafer successively at several measuring points. Two measuring points have a distance dmax of 140 mm?dmax?600 mm. An evaluation unit calculates distance values and/or thickness values from the interference signals provided by the optical coherence tomograph and, based on the distance values and/or thickness values, at least one characteristic quantity of the wafer such as TTV, warp or bow.

Abstract: An optical thickness measuring device includes a light source, a measuring head, an optical spectrometer with an optical component for spectrally splitting an input light, a detector, and an evaluation device. The light source is optically connected to the measuring head and is configured to generate an at least low-coherence measuring light and to direct it to the measuring head. The measuring head is optically connected to the spectrometer and is configured to direct the measuring light onto a measuring object and to direct light reflected therefrom, which originates from two different surfaces, onto a measuring object, which originates from two different surfaces, and to direct the reflected light to the spectrometer as input light.

Abstract: A device for measuring wafers includes an optical coherence tomograph and a scanning device that scans the surface of the wafer successively at a plurality of measuring points. Two measuring points have a distance dmax of 140 mm?dmax?600 mm. An evaluation unit calculates distance values and/or thickness values from the interference signals provided by the optical coherence tomograph.

Abstract: A chromatic, confocal measuring device uses a broadband, high-intensity light source implemented by optically pumping a luminophore. The illumination of the luminophore is selected so that the properties of the luminophore are exploited to maximize the optical output power of the light source.